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參數(shù)資料
| 型號(hào)： | JDP2S02S |
| 元件分類： | PIN二極管 |
| 英文描述： | SILICON, PIN DIODE |
| 封裝： | 1-1K1A, SESC, 2 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | JDP2S02S |
JDP2S02S
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S02S
UHF~VHF Band RF Attenuator Applications
Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
Low series resistance: rs = 1.0 (typ.)
Low capacitance: CT = 0.3 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
30
V
Forward current
IF
50
mA
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 10 μA
30
V
Reverse current
IR
VR = 30 V
0.1
μA
Forward voltage
VF
IF = 50 mA
0.9
0.94
V
Capacitance
CT
VR = 1 V, f = 1 MHz
0.3
0.5
pF
Series resistance
rs
IF = 10 mA, f = 100 MHz
1.0
1.5
Note: Signal level when capacitance is measured. Vsig = 20 mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g (typ.)
2
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