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參數(shù)資料
| 型號(hào)： | JANTXV1N6778 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 400 V, SILICON, RECTIFIER DIODE, TO-257 |
| 封裝： | TO-257, 2 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 90K |
| 代理商： | JANTXV1N6778 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ULTRAFAST POWER RECTIFIER
Qualified per MIL-PRF-19500/647
T4-LDS-0017 Rev. 1 (072043)
Page 1 of 1
DEVICES
LEVELS
1N6778
1N6779
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
1N6778
1N6779
VRWM
400
600
Vdc
Average Forward Current (1)
TC = +100°C
IF
15
Adc
Peak Surge Forward Current
IFSM
140
A (pk)
Thermal Resistance Junction to Case
RθJC
1.8
°C/W
Note:
(1) Derate at 300mA/°C above TC = +100°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Breakdown Voltage
IR = 10A
(2)
1N6778
1N6779
VBR
400
600
Vdc
Forward Voltage
IF = 8Adc
(2)
IF = 15Adc
(2)
VF1
VF2
1.40
1.60
Vdc
Reverse Leakage Current
VR = 320V
(2)
VR = 480V
(2)
1N6778
1N6779
IR1
10
Adc
Reverse Leakage Current
TC = +100°C
VR = 320V
(2)
VR = 480V
(2)
1N6778
1N6779
IR2
1.0
mA
Reverse Recovery Time
IF = 0.5, IRM = 1.0, IRR = 0.25
trr
60
ns
Junction Capacitance
VR = 5Vdc, f = 1.0MHz
CJ
300
pF
Notes:
(2) Pulse test, 300s, Duty Cycle ≤ 2%
TO-257
(2 Pin Version)
1
2
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