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參數(shù)資料
| 型號： | JANTXV1N6776 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, SILICON, RECTIFIER DIODE, TO-257 |
| 封裝： | SIMILAR TO TO-257, 2 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 43K |
| 代理商： | JANTXV1N6776 |
TECHNICAL DATA
ULTRAFAST SILICON POWER RECTIFIER
Qualified per MIL-PRF-19500/646
Devices
Qualified Level
1N6774
1N6775
1N6776
1N6777
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 1N6774 1N6775 1N6776 1N6777
Unit
Working Peak Reverse Voltage
VRWM
50
100
150
200
Vdc
Forward Current
TC = +100°C
(1)
IF
15
Adc
Forward Current Surge Peak TP = 8.3
0C
IFSM
180
Apk
Operating & Storage Junction Temperature
Top, Tstg
-65 to +150
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
2.0
0C/W
Thermal Resistance, Junction-to-Ambient
RθJA
40
0C/W
1) Derate at 300 mA/
0C above T
C = +100
0C
TO-257*
(2-PIN-ISOLATED)
*See appendix A for
ELECTRICAL CHARACTERISTICS (TC = +25
0C Unless Otherwise Noted)
package outline
Characteristics
Symbol
Min.
Max.
Unit
Forward Voltage
IF = 8.0 Adc, pulsed
IF = 15 Adc, pulsed
VF
1.00
1.15
Vdc
Reverse Current Leakage
VR = 0.8 of VRWM
IR
10
Adc
Thermal Impedance
IM =15 mAdc; IH = 9.9 Adc;
t
H = 200 ms;
t
MD = 35
s; V
H = 1 Vdc
ZJX
1.8
0C/W
Breakdown Voltage
IR = 10 Adc
1N6774
1N6775
1N6776
1N6777
VBR
50
100
150
200
Vdc
Junction Capacitance
VR = 5.0 Vdc, f = 1.0 MHz
CJ
300
pF
Reverse Recovery Time
IF = 1.0 Adc; di/dt = 50 A/s
trr
35
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 1
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| JANTXV1N6775 | 15 A, SILICON, RECTIFIER DIODE, TO-257 |
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