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參數(shù)資料
| 型號： | JANTXV1N6461 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 169K |
| 代理商： | JANTXV1N6461 |
Silicon Rectifier Diodes
DO-35 Glass Package
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
Absolute Maximum Ratings
Symbol
Value
Unit
Power Dissipation at 3/8" from the body, T
L= 75
oC
P
tot
600
mWatts
Average Forward Rectified Current at T
L
= 75 oC
I
AV
400
mAmps
Operating and Storage Temperature Range
T
O&S
-65 to 175
oC
Thermal Impedance
Z
q
JX
35
oC/W
Detail Specifications
Features
Six Sigma quality
Humidity proof glass
Metallurgically bonded
Thermally matched system
No thermal fatigue
High surge capability
Sigma Bond plated contacts
100% guaranteed solderability
(DO-213AA) SMD MELF commercial (LL) and MIL (UR-1) types available
Use Advantages
Used as a general purpose rectifier in power supplies, or for clipping and
steering applications.
High performance alternative to small signal diodes where space does not
permit use of power rectifiers.
May be used in hostile environments where hermeticity and reliability are
important i.e. (Military and Aero/Space). MIL-S- 19500/ 240 approvals.
Available up to JANTXV-1 level.
"S" level screening capability to Source Control Drawings.
Breakdown
Maximum
Forward
Maximum
Typical
Reverse
Voltage
Average Rectified Current
Voltage
Reverse Leakage Current
Surge
Junction
Voltage
(MIN.)
_______________
Drop
_______________
Current Capacitance
@ 100A
(I
O)(IO)(VF) @ IF = 400mA
(I
R) @ VR
(I
FSM)
@ -12V
(V
R)(BV)
25° C
150° C (MIN.)
(MAX.)
25° C
100° C
(NOTE 1)
(C
O)
Type
Volts
Amps
Volts
A
Amps
pF
1N645,-1
225
275
0.4
0.15
1.0
0.2
15
3
9
1N646,-1
300
360
0.4
0.15
1.0
0.2
15
3
9
1N647,-1
400
480
0.4
0.15
1.0
0.2
20
3
9
1N648,-1
500
600
0.4
0.15
1.0
0.2
20
3
9
1N649,-1
600
720
0.4
0.15
1.0
0.2
25
3
9
Note 1: Surge Current @T
A = +25° C to +150° C, for 1 Second
For MELF DO-213AA surface mount package, replace "1N" prefix with "LL" for commercial.
1N645 to 649
or
1N645-1 to 649-1
D O -35 G lass P a ck a g e
Dia.
0.06 -0 .09"
1.0"
25.4 m m
(M in .)
Len g th
0.12 0-.200 "
3.05 -5 .08-
mm
1.53-2.28 mm
0.018-0.022"
0.458-0.558 mm
Lead Dia.
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相關代理商/技術參數(shù) |
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|---|---|
| JANTXV1N6461US | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 5V 500W 2PIN MELF - Trays |
| JANTXV1N6462 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR (TVS) - Bulk |
| JANTXV1N6462US | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 6V 500W 2PIN MELF - Trays |
| JANTXV1N6463 | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 12V 500W 2PIN E - Bulk |
| JANTXV1N6463US | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 12V 500W 2-Pin E-MELF 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 12V 500W 2PIN MELF - Trays |
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