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參數(shù)資料
| 型號(hào)： | JANTXV1N645UR-1 |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.15 A, SILICON, SIGNAL DIODE, DO-213AA |
| 封裝： | GLASS, SIMILAR TO DO-213AA, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 33K |
| 代理商： | JANTXV1N645UR-1 |
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
100 C/W maximum
THERMAL IMPEDANCE: (ZOJX): 35
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
D
1.60
1.70
0.063 0.067
F
0.41
0.55
0.016 0.022
G
3.30
3.70
.130
.146
G1
2.54 REF.
.100 REF.
S
0.03 MIN.
.001 MIN.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
AVAILABLE IN
JAN, JANTX AND JANTXV
PER MIL-PRF-19500/240
SILICON RECTIFIER
METALLURGICALLY BONDED
1N645UR-1
CDLL645
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 400 mA @ 25C
150 mA @ 150C
Derating: 2.0mA/°C between 25C to 150C
6.0mA/°C between 150C to 175C
VRSM
VRWM
I FSM
VF
CAP
TYPE
TP=1/120 s
@400mA
@ VR
TA=25C
=4V
V(pk)
AVDC
PF
CDLL, 1N645UR-1
270
225
5
0.8 -1.0
2.0
IR1 at VRWM IR2 at VRWM
IR3 at VRSM
TYPE
TA=25C
TA = 150°C
TA=25C
A
CDLL, 1N645UR-1
0.05
25
50
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JAN1N649UR-1 | 0.15 A, SILICON, SIGNAL DIODE, DO-213AA |
| JANTXV1N647UR-1 | 0.15 A, SILICON, SIGNAL DIODE, DO-213AA |
| JANTX1N647UR-1 | 0.15 A, SILICON, SIGNAL DIODE, DO-213AA |
| JANTXV1N645UR-1 | 0.15 A, SILICON, SIGNAL DIODE, DO-213AA |
| JAN1N647UR-1 | 0.15 A, SILICON, SIGNAL DIODE, DO-213AA |
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