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參數(shù)資料
| 型號(hào)： | JANTXV1N6075 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, SILICON, RECTIFIER DIODE |
| 封裝： | SIMILAR TO DO-35, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 352K |
| 代理商： | JANTXV1N6075 |
S
VOIDLESS HERMETICALLY SEALED
ULTRA FAST RECOVERY GLAS
POWER RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2004
12-08-2004 REV A
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SCOTTSD A L E DIVISION
1N6073 thru 1N6081
1N6073
thru
1N6081
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/503 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 3, 6, and 12 Amp rated rectifiers (TL =70C) in
different package sizes for working peak reverse voltages from 50 to 150 volts are
hermetically sealed with voidless-glass construction using an internal “Category I”
metallurgical bond.
These devices are also available in surface mount MELF
package configurations by adding a “US” suffix (see separate data sheet for
1N6073US thru 1N6081US).
Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
requirements including standard, fast and ultrafast device types in both through-hole
and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Popular JEDEC registered 1N6073 to 1N6081 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, and JANTXV available for 1N6074 and
1N6075 per MIL-PRF-19500/503
Further options for screening in accordance with MIL-
PRF-19500 for JAN, JANTX, JANTXV, or JANS by
using a MQ, MX, MV or MSP prefix respectively , e.g.
MX6076, MV6079, MSP6081, etc.
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix
Ultrafast recovery rectifier series 50 to 150 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction Temperature: -65oC to +155oC
Storage Temperature: -65oC to +155oC
Peak Forward Surge Current @ 25oC: 35 Amps for
1N6073-6075, 75 Amps for 1N6076-6078, and 175
Amps for 1N6079-6081 at 8.3 ms half-sine wave
Average Rectified Forward Current (IO) at TL= +70oC
(L= 0 inch from body):
1N6073 thru 1N6075: 3.0 Amps
1N6076 thru 1N6078: 6.0 Amps
1N6079 thru 1N6081: 12.0 Amps
Average Rectified Forward Current (IO) at TA=55
oC:
1N6073 thru 1N6075: 0.85 Amps
1N6076 thru 1N6078: 1.3 Amps
1N6079 thru 1N6081: 2.0 Amps
Thermal Resistance L= 0 inch (RθJL): 13
oC/W for
1N6073-6075, 8.5
oC/W for 1N6076-6078, and
5.0
oC/W for 1N6079-6081
Solder temperature: 260oC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial-leads are Copper with
Tin/Lead (Sn/Pb) finish
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 1N6073 thru 1N6075: 340 mg
1N6076 thru 1N6078: 750 mg
1N6079 thru 1N6081: 1270 mg
See package dimensions on last page
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JAN1N6076 | 6 A, SILICON, RECTIFIER DIODE |
| JANTXV1N6073 | 3 A, SILICON, RECTIFIER DIODE |
| JANS1N6075 | 3 A, SILICON, RECTIFIER DIODE |
| JANTXV1N6076 | 6 A, SILICON, RECTIFIER DIODE |
| JANS1N6073 | 3 A, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV1N6076 | 功能描述:Diode Standard 50V 1.3A Through Hole E-PAK 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/503 包裝:散裝 零件狀態(tài):在售 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:50V 電流 - 平均整流（Io）:1.3A 不同 If 時(shí)的電壓 - 正向（Vf）:1.76V @ 18.8A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間（trr）:30ns 不同?Vr 時(shí)的電流 - 反向漏電流:1μA @ 50V 不同?Vr，F(xiàn) 時(shí)的電容:- 安裝類型:通孔 封裝/外殼:E，軸向 供應(yīng)商器件封裝:E-PAK 工作溫度 - 結(jié):-65°C ~ 155°C 標(biāo)準(zhǔn)包裝:1 |
| JANTXV1N6077 | 功能描述:Diode Standard 100V 1.3A Through Hole E-PAK 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/503 包裝:散裝 零件狀態(tài):在售 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:100V 電流 - 平均整流（Io）:1.3A 不同 If 時(shí)的電壓 - 正向（Vf）:1.76V @ 18.8A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間（trr）:30ns 不同?Vr 時(shí)的電流 - 反向漏電流:1μA @ 100V 不同?Vr，F(xiàn) 時(shí)的電容:- 安裝類型:通孔 封裝/外殼:E，軸向 供應(yīng)商器件封裝:E-PAK 工作溫度 - 結(jié):-65°C ~ 155°C 標(biāo)準(zhǔn)包裝:1 |
| JANTXV1N6078 | 功能描述:Diode Standard 150V 1.3A Through Hole E-PAK 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/503 包裝:散裝 零件狀態(tài):在售 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:150V 電流 - 平均整流（Io）:1.3A 不同 If 時(shí)的電壓 - 正向（Vf）:1.76V @ 18.8A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間（trr）:30ns 不同?Vr 時(shí)的電流 - 反向漏電流:1μA @ 150V 不同?Vr，F(xiàn) 時(shí)的電容:- 安裝類型:通孔 封裝/外殼:E，軸向 供應(yīng)商器件封裝:E-PAK 工作溫度 - 結(jié):-65°C ~ 155°C 標(biāo)準(zhǔn)包裝:1 |
| JANTXV1N6081 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| JANTXV1N6100 | 功能描述:TVS DIODE 14CFLATPACK 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/474 包裝:管件 零件狀態(tài):在售 類型:轉(zhuǎn)向裝置（軌至軌） 單向通道:7 雙向通道:- 電壓 - 反向關(guān)態(tài)（典型值）:- 電壓 - 擊穿（最小值）:- 電壓 - 箝位（最大值）@ Ipp:- 電流 - 峰值脈沖（10/1000μs）:- 功率 - 峰值脈沖:- 電源線路保護(hù):無 應(yīng)用:以太網(wǎng) 不同頻率時(shí)的電容:- 工作溫度:-65°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:14-CFlatpack 供應(yīng)商器件封裝:14-CFlatpack 標(biāo)準(zhǔn)包裝:1 |
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