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參數(shù)資料
| 型號： | JANTXV1N5812 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 封裝： | DO-4, 1 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 72K |
| 代理商： | JANTXV1N5812 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY ULTRA FAST RECOVERY RECTIFIER
Qualified per MIL-PRF-19500/478
175°C Junction Temperature VRRM 50 to 150 Volts
20 Amps Current Rating
T4-LDS-0145 Rev. 1 (091811)
Page 1 of 3
DEVICES
LEVELS
1N5812
1N5812R
JAN
1N5814
1N5814R
JANTX
1N5816
1N5816R
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
1N5812 / R
1N5814 / R
1N5816 / R
VRWM
50
100
150
V
Peak Working Reverse Voltage
1N5812 / R
1N5814 / R
1N5816 / R
VRRM
50
100
150
V
Average Forward Current, TC = 100°
IF
20
A
Peak Surge Forward Current @ tp = 8.3ms, half sinewave, TC = 100°C
IFSM
400
A
Thermal Resistance, Junction to Case
RθJC
1.5
°C/W
Operating Junction Temperature Range
TJ
-65°C to 175°C
°C
Storage Temperature Range
Tstg
-65°C to 175°C
°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Forward Voltage
IFM = 10A, TC = 25°C*
VFM
0.860
V
Forward Voltage
IFM = 20A, TC = 25°C*
VFM
0.950
V
Forward Voltage
IFM = 10A, TC = 100°C*
VFM
0.780
V
Reverse Current
VRM = 50V, TC = 25°C
VRM = 100V, TC = 25°C
VRM = 150V, TC= 25°C
1N5812 / R
1N5814 / R
1N5816 / R
IRM
10
μA
Reverse Current
VRM = 50V, TC = 100°C
VRM = 100V, TC = 100°C
VRM = 150V, TC = 100°C
1N5812 / R
1N5814 / R
1N5816 / R
IRM
1
mA
Reverse Recovery Time
IF = IR = 1A
Trr
35
ns
Capacitance Junction
VR = 10V, f = 1MHz, TJ = 25°C
CJ
300
pF
* Pulse test: Pulse width 300 sec, Duty cycle 2%
DO-203AA (DO-4)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JAN1N5814R | 20 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AA |
| JANTX1N5812 | 20 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA |
| JANTXV1N5816 | 20 A, 150 V, SILICON, RECTIFIER DIODE, DO-203AA |
| JAN1N5819-1 | 1 A, 45 V, SILICON, SIGNAL DIODE, DO-41 |
| JANTXV1N6761-1 | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV1N5812R | 制造商:Microsemi Corporation 功能描述:FAST RECOVERY RECTFR 50V 20A 2PIN DO-4 - Bulk |
| JANTXV1N5814 | 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECOVERY RECTFR 100V 20A 2PIN DO-4 - Bulk |
| JANTXV1N5814R | 制造商:Microsemi Corporation 功能描述:FAST RECOVERY RECTFR 100V 20A 2PIN DO-4 - Bulk |
| JANTXV1N5816 | 制造商:Microsemi Corporation 功能描述:Diode Switching 150V 20A 2-Pin DO-4 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECOVERY RECTFR 150V 20A 2PIN DO-4 - Bulk |
| JANTXV1N5816R | 制造商:Microsemi Corporation 功能描述:FAST RECOVERY RECTFR 150V 20A 2PIN DO-4 - Bulk |
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