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參數(shù)資料
| 型號： | JANTXV1N5807US |
| 元件分類： | 整流器 |
| 英文描述： | 6 A, 50 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 52K |
| 代理商： | JANTXV1N5807US |
POWER DISCRETES
1
www.semtech.com
1N5807US/1N5809US/1N5811US
Superfast Recovery Diodes
Surface Mount (US)
Features
Revision: May 26, 2006
Quick reference data
V
R 50 -150 V
I
F 1N5807US to 1N5811US = 6A
t
rr 1N5807US to 1N5811US = 30nS
I
R
1N5807US to 1N5811US = 5A
u Very low reverse recovery time
u Hermetically sealed non-cavity construction
u Soft, non-snap, off recovery characteristics
u Very low forward voltage drop
Electrical Specifications
Electrical specifications @ T
A = 25°C unless otherwise specified.
Symbol
1N5807US
1N5809US
1N5811US
Units
Working Reverse Voltage
V
RWM
50
100
150
V
Repetitive Reverse Voltage
V
RRM
50
100
150
V
Average Forward Current
(@ 75°C lead length = 0.375')
I
F(AV)
6.0
A
Repetitive Surge Current
(@ 55°C in free air lead length = 0.375')
I
FRM
25
A
Non-Repetitive Surge Current
(tp = 8.3mS @ Vr & T
JMAX)
I
FSM
125
A
Storage Temperature Range
T
STG
-65 to +175
°C
Average Forward Current Max
(pcb mounted: T
A = 55°C)
Sine wave
Square wave (d = 0.5)
I
F(AV)
I
F(AV)
1.7
1.8
A
I2t for fusing (t = 8.3mS) max
I2t
32
A2S
Forward Voltage Drop max
@ T
J = 25°C
V
F
0.875 @ 4A
V
Reverse Current max
@ V
WRM,
T
J = 25°C
@ V
WRM, TJ = 100°C
I
R
I
R
5.0
150
A
Reverse Recovery Time max
(1.0A I
F to 1.0A IRM recover to 0.25A IRM(REC))
trr
30
nS
Junction Capacitance typ
@ V
R = 5V f = 1MHz
C
J
60
pF
Thermal Resistance to end cap
R θ
JEC
6.5
°C/W
Description
These products are qualified to MIL-PRF-19500/477
and are preferred parts as listed in MIL-HDBK-5961.
They can be supplied fully released as JANTX , JANTXV
and JANS versions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANS1N5807US | 6 A, 50 V, SILICON, RECTIFIER DIODE |
| JANTX1N5807US | 6 A, 50 V, SILICON, RECTIFIER DIODE |
| JANTXV1N5811US | 6 A, 150 V, SILICON, RECTIFIER DIODE |
| JANTXV1N5812R | 20 A, SILICON, RECTIFIER DIODE, DO-4 |
| JAN1N5812R | 20 A, SILICON, RECTIFIER DIODE, DO-4 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV1N5809 | 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Bulk |
| JANTXV1N5809URS | 功能描述:Diode Standard 100V 3A Surface Mount B, SQ-MELF 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/477 包裝:散裝 零件狀態(tài):在售 二極管類型:標(biāo)準 電壓 - DC 反向（Vr）（最大值）:100V 電流 - 平均整流（Io）:3A 不同 If 時的電壓 - 正向（Vf）:875mV @ 4A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時間（trr）:30ns 不同?Vr 時的電流 - 反向漏電流:5μA @ 100V 不同?Vr，F(xiàn) 時的電容:60pF @ 10V，1MHz 安裝類型:表面貼裝 封裝/外殼:SQ-MELF，B 供應(yīng)商器件封裝:B，SQ-MELF 工作溫度 - 結(jié):-65°C ~ 175°C 標(biāo)準包裝:1 |
| JANTXV1N5809US | 制造商:Microsemi Corporation 功能描述:Diode Switching 100V 6A 2-Pin E-MELF 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Trays |
| JANTXV1N5811 | 制造商:Microsemi Corporation 功能描述:Diode Switching 150V 6A 2-Pin Case E 制造商:Semtech Corporation 功能描述:Diode Switching 150V 6A 2-Pin Case G-112 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECTIFIER (LESS THAN 100NS) (UFR) - Bulk |
| JANTXV1N5811CBUS | 制造商:Microsemi Corporation 功能描述:Diode Switching 150V 6A 2-Pin E-MELF |
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