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參數(shù)資料
| 型號： | JANTXV1N5641ATR |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| 封裝： | HERMETIC SEALED, GLASS, DO-13, 2 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 135K |
| 代理商： | JANTXV1N5641ATR |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
1500 WATT UNIDIRECTIONAL
TRANSIENT VOLTAGE SUPPESSOR
Qualified per MIL-PRF-19500/500
T4-LDS-0096 Rev. 1 (082644)
Page 2 of 6
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
ESD & EFT protection per IEC 61000-4-2 and -4-4
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
Class 1: 1N5629 to 1N5665A
Class 2: 1N5629 to 1N5663A
Class 3: 1N5629 to 1N5655A
Class 4: 1N5629 to 1N5648A
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
Class 1: 1N5629 to 1N5658A
Class 2: 1N5629 to 1N5651A
Class 3: 1N5629 to 1N5643A
Class 4: 1N5629 to 1N5636A
Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:
Class 2: 1N5629 to 1N5642A
Class 3: 1N5629 to 1N5635A
Inherently radiation hard per Microsemi MicroNote 050
MAXIMUM RATINGS
1500 Watts for 10/1000 μs with repetition rate of 0.01% or less* at lead temperature (TL) 25
oC (see Figs 1, 2, & 4)
Operating & Storage Temperatures: -65o to +175oC
THERMAL RESISTANCE: 50oC/W junction to lead at 0.375 inches (10 mm) from body or 110oC/W junction to
ambient when mounted on FR4 PC board with 4 mm2 copper pads (1oz) and track width 1 mm, length 25 mm
DC Power Dissipation*: 1 Watt at TL ≤ +125
oC 3/8” (10 mm) from body (see derating in Fig 3 and note below)
Forward surge current: 200 Amps for 8.3ms half-sine wave at TA = +25
oC
Solder Temperatures: 260 o C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: DO-13 (DO-202AA), welded, hermetically sealed metal and glass
FINISH: All external metal surfaces are Tin-Lead plated and solderable per MIL-STD-750 method 2026
POLARITY: Cathode connected to case and polarity indicated by diode symbol
MARKING: Part number and polarity diode symbol
WEIGHT: 1.4 grams. (Approx)
TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number)
See package dimension on last page
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage
(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTXV1N5642ATR | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| JANTXV1N5651ATR | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| JANTX1N5646ATR | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| JANTX1N5648ATR | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| JAN1N5642ATR | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV1N5642A | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR - Bulk |
| JANTXV1N5643A | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 23.1V 1.5KW 2PIN DO-13 - Bulk |
| JANTXV1N5644A | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 25.6V 1.5KW 2PIN DO-13 - Bulk |
| JANTXV1N5645A | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 28.2V 1.5KW 2-Pin DO-13 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 28.2V 1.5KW 2PIN DO-13 - Bulk |
| JANTXV1N5646A | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 30.8V 1.5KW 2PIN DO-13 - Bulk |
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