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參數(shù)資料
| 型號： | JANTXV1N5520D-1 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 中文描述： | 3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 封裝： | DO-7, 2 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 194K |
| 代理商： | JANTXV1N5520D-1 |
Low Voltage Surface Mount
500 mW Avalanche Diodes
SCOTTSD A L E DIVISION
IN5518BUR-1 thru 1N5546BUR-1
(or MLL5518B-1 thru MLL5546B-1)
W
.Mi
cr
os
em
i
.C
O
M
1N5
518
BUR
–
1N5
546
BUR
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted. Based on DC measurements at
thermal equilibrium; VF = 1.1 Max @ IF = 200 mA for all types.)
MAX. REVERSE CURRENT
(Note 4)
VR – VOLTS
JEDEC TYPE
NUMBER
(Note 1 and
Note 7)
NOMINAL
ZENER
VOLTAGE
VZ @ IZT
(Note 2)
VOLTS
TEST
CURRENT
IZT
mAdc
MAX. ZENER
IMPEDANCE
B-C-D SUFFIX
ZZT @ IZT
(Note 3)
OHMS
IR
Adc
NON & A-
SUFFIX
B-C-D
SUFFIX
B-C-D
SUFFIX
MAXIMUM
DC ZENER
CURRENT
IZM
(Note 5)
mAdc
B-C-D SUFFIX
MAX. NOISE
DENSITY
AT IZ = 250A
ND
V/ √Hz
REGULATION
FACTOR
VZ
(Note 6)
VOLTS
LOW VZ
CURRENT
IZL
(Note 6)
mAdc
1N5518BUR-1
1N5519BUR-1
1N5520BUR-1
1N5521BUR-1
1N5522BUR-1
3.3
3.6
3.9
4.3
4.7
20
10
26
24
22
18
22
5.0
3.0
1.0
3.0
2.0
0.90
1.0
1.5
1.0
1.5
2.0
115
105
98
88
81
0.5
0.90
0.85
0.75
0.60
2.0
1.0
1N5523BUR-1
1N5524BUR-1
1N5525BUR-1
1N5526BUR-1
1N5527BUR-1
5.1
5.6
6.2
6.8
7.5
5.0
3.0
1.0
26
30
35
2.0
1.0
0.5
2.0
3.0
4.5
5.5
6.0
2.5
3.5
5.0
6.2
6.8
75
68
61
56
51
0.5
1.0
2.0
0.65
0.30
0.20
0.10
0.05
0.25
0.01
1N5528BUR-1
1N5529BUR-1
1N5530BUR-1
1N5531BUR-1
1N5532BUR-1
8.2
9.1
10.0
11.0
12.0
1.0
40
45
60
80
90
0.5
0.1
0.05
6.5
7.0
8.0
9.0
9.5
7.5
8.2
9.1
9.9
10.8
46
42
38
35
32
4.0
5.0
10
0.05
0.10
0.20
0.01
1N5533BUR-1
1N5534BUR-1
1N5535BUR-1
1N5536BUR-1
1N5537BUR-1
13.0
14.0
15.0
16.0
17.0
1.0
90
100
0.01
10.5
11.5
12.5
13.0
14.0
11.7
12.6
13.5
14.4
15.3
29
27
25
24
22
15
20
0.20
0.01
1N5538BUR-1
1N5539BUR-1
1N5540BUR-1
1N5541BUR-1
1N5542BUR-1
18.0
19.0
20.0
22.0
24.0
1.0
100
0.01
15.0
16.0
17.0
18.0
20.0
16.2
17.1
18.0
19.8
21.6
21
20
19
17
16
20
0.20
0.25
0.30
0.01
1N5543BUR-1
1N5544BUR-1
1N5545BUR-1
1N5546BUR-1
25.0
28.0
30.0
33.0
1.0
100
0.01
21.0
23.0
24.0
28.0
22.4
25.2
27.0
29.7
15
14
13
12
20
0.35
0.40
0.45
0.50
0.01
NOTES:
1.
TOLERANCE AND VOLTAGE DESIGNATION –
The JEDEC type numbers without a letter prior to the UR-1 suffix are +/-20% with guaranteed limits for only VZ, IR, and VF.
Units with “A” prior to the UR-1 suffix are +/-10% with guaranteed limits for VZ, IR, and VF. Units with guaranteed limits for all six
parameters are indicated by a B suffix for +/-5.0% units, C suffix for +/-2.0% and D suffix for +/-1.0% prior to the UR-1 suffix.
2.
ZENER VOLTAGE (VZ) MEASUREMENT –
Nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature of 25
oC.
3.
ZENER IMPEDANCE (ZZ) MEASUREMENT –
The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal to 10%
of the dc zener current (IZT) is superimposed on IZT.
4.
REVERSE CURRENT (IR) –
Reverse currents are guaranteed and are measured at VR as shown on the table.
5.
MAXIMUM REGULATOR CURRENT (IZM) –
The maximum current shown is as shown in MIL-PRF-19500/437.
6.
MAXIMUM REGULATION FACTOR (
VZ) –
VZ is the maximum difference between VZ at IZT and VZ at IZL measured with the device junction in thermal equilibrium.
7.
PART NUMBER – These may be ordered as either 1N5518BUR-1 thru 1N5546BUR-1 or as MLL5518B-1 thru MLL5546B-1 part
numbers. For military types, use the 1NxxxUR-1 format and also include JAN, JANTX, or JANTXV prefix for desired screening
level, e.g. JANTX1N5518BUR-1, JANTXV1N5532BUR-1, JANTXV1N5534CUR-1, JANTXV1N5545DUR-1, etc.
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2003
10-31-2003 REV B
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| JANTXV1N5520DUR-1 | 功能描述:Zener Diode 3.9V 500mW ±1% Surface Mount DO-213AA 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/437 包裝:散裝 零件狀態(tài):在售 電壓 - 齊納（標稱值）（Vz）:3.9V 容差:±1% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:22 歐姆 不同?Vr 時的電流 - 反向漏電流:1μA @ 1V 不同 If 時的電壓 - 正向（Vf）:1.1V @ 200mA 工作溫度:-65°C ~ 175°C 安裝類型:表面貼裝 封裝/外殼:DO-213AA（玻璃） 供應商器件封裝:DO-213AA 標準包裝:1 |
| JANTXV1N5521B-1 | 制造商:Aeroflex / Metelics 功能描述:LOW VOLTAGE AVALANCHE ZENER - Bulk 制造商:Microsemi Corporation 功能描述:ZENER SGL 4.3V 5% 417MW 2PIN DO-204AA - Bulk |
| JANTXV1N5521BUR-1 | 制造商:Aeroflex / Metelics 功能描述:LOW VOLTAGE AVALANCHE ZENER - Bulk 制造商:Microsemi Corporation 功能描述:ZENER SGL 4.3V 5% 500MW 2PIN DO-213AA - Trays |
| JANTXV1N5521C-1 | 功能描述:Zener Diode 4.3V 500mW ±2% Through Hole DO-35 (DO-204AH) 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/437 包裝:散裝 零件狀態(tài):在售 電壓 - 齊納（標稱值）（Vz）:4.3V 容差:±2% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:18 歐姆 不同?Vr 時的電流 - 反向漏電流:3μA @ 1.5V 不同 If 時的電壓 - 正向（Vf）:1.1V @ 200mA 工作溫度:-65°C ~ 175°C 安裝類型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應商器件封裝:DO-35（DO-204AH） 標準包裝:1 |
| JANTXV1N5521CUR-1 | 功能描述:Zener Diode 4.3V 500mW ±2% Surface Mount DO-213AA 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/437 包裝:散裝 零件狀態(tài):在售 電壓 - 齊納（標稱值）（Vz）:4.3V 容差:±2% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:18 歐姆 不同?Vr 時的電流 - 反向漏電流:3μA @ 1.5V 不同 If 時的電壓 - 正向（Vf）:1.1V @ 200mA 工作溫度:-65°C ~ 175°C 安裝類型:表面貼裝 封裝/外殼:DO-213AA（玻璃） 供應商器件封裝:DO-213AA 標準包裝:1 |
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