參數(shù)資料
型號(hào)： JANTX2N6802U
廠商： International Rectifier
英文描述： HEXFET TRANSISTOR
中文描述： 的HEXFET晶體管
文件頁數(shù)： 1/8頁
文件大?。?/td> 129K
代理商： JANTX2N6802U
Product Summary
Part Number
BV
DSS
R
DS(on)
1.50
I
D
IRFE430
500V
2.5A
Features:
n
Hermetically Sealed
n
Simple Drive Requirements
n
Ease of Paralleling
n
Small footprint
n
Surface Mount
n
Lightweight
N-CHANNEL
Provisional Data Sheet No. PD - 9.1719
500Volt, 1.50
, HEXFET
The leadless chip carrier (LCC) package represents
the logical next step in the continual evolution of
surface mount technology. The LCC provides
designers the extra flexibility they need to increase
circuit board density. International Rectifier has
engineered the LCC package to meet the specific
needs of the power market by increasing the size of
the bottom source pad, thereby enhancing the
thermal and electrical performance. The lid of the
package is grounded to the source to reduce RF
interference.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits, and
virtually any application where high reliability is re-
quired.
12/3097
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Surface Temperature
Weight
IRFE430, JANTX-, JANTXV-, 2N6802U
Units
2.5
1.5
11
25
0.20
±20
0.31
6.2
-55 to 150
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
W
W/K
V
mJ
V/ns
VGS
EAS
dv/dt
TJ
TSTG
300 ( for 5 seconds)
0.42 (typical)
g
o
C
A
IRFE430
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
JANTX2N6802U
JANTXV2N6802U
[REF:MIL-PRF-19500/557]
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