TECHNICAL DATA
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 441
Devices
Qualified Level
2N3740
2N3741
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
2N3740
60
60
2N3741
80
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @143 mW/
0
C
> +25
0
C
7.0
2.0
4.0
25
14
@ T
C
= +25
0
C
(1)
@ T
C
= +100
0
C
P
T
T
J
,
T
stg
-65 to +200
Symbol
R
θ
JC
Max.
7.0
Unit
0
C/W
TO-66 (TO-213AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Cutoff Current
V
CE
= 40 Vdc
V
CE
= 60 Vdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc, V
BE
= 1.5 Vdc
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
V
CB
= 80 Vdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
2N3740
2N3741
V
(BR)
CEO
60
80
Vdc
2N3740
2N3741
I
CEO
10
10
300
300
100
100
100
μ
Adc
2N3740
2N3741
I
CEX
η
Adc
2N3740
2N3741
I
CBO
η
Adc
I
EBO
η
Adc
120101
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