參數(shù)資料
型號: JANTX1N944B
廠商: MICROSEMI CORP
元件分類: 參考電壓二極管
英文描述: 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35
封裝: HERMETIC SEALED, GLASS, SIMILAR TO DO-7, 2 PIN
文件頁數(shù): 2/3頁
文件大?。?/td> 284K
代理商: JANTX1N944B
11.7 Volt Temperature Compensated Zener
Reference Diodes
SCOTTSD A L E DIVISION
1N941 thru 1N946B-1
W
.Mi
cr
os
em
i
.C
O
M
1N
94
1
-
1N
94
6B
-1
*ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified
ZENER
VOLTAGE
VZ @ IZT
(Note 4)
ZENER
TEST
CURRENT
IZT
MAXIMUM
ZENER
IMPEDANCE
(Note 2)
ZZT @ IZT
MAXIMUM
REVERSE
CURRENT
IR @ 8 V
VOLTAGE
TEMPERATURE
STABILITY
(Note 3 & 4)
VZT
MAXIMUM
TEMPERATURE
RANGE
EFFECTIVE
TEMPERATURE
COEFFICIENT
α
VZ
JEDEC
TYPE
NUMBER
(Note 1,
5 & 6)
VOLTS
mA
OHMS
A
mV
oC
%/
oC
1N941
1N941A
1N941B
11.12-12.28
7.5
30
15
88
181
239
0 to +75
-55 to +100
-55 to +150
0.01
1N942
1N942A
1N942B
11.12-12.28
7.5
30
15
44
90
120
0 to +75
-55 to +100
-55 to +150
0.005
1N943
1N943A
1N943B
11.12-12.28
7.5
30
15
18
36
47
0 to +75
-55 to +100
-55 to +150
0.002
1N944
1N944A
1N944B
11.12-12.28
7.5
30
15
9
18
24
0 to +75
-55 to +100
-55 to +150
0.001
1N945
1N945A
1N945B
11.12-12.28
7.5
30
15
4
9
12
0 to +75
-55 to +100
-55 to +150
0.0005
1N946
1N946A
1N946B
11.12-12.28
7.5
30
15
1.8
3.6
4.7
0 to +75
-55 to +100
-55 to +150
0.0002
*JEDEC Registered Data.
NOTES:
1.
For tighter voltages tolerances, add a hyphenated suffix to the part number for desired tolerance at the end of the part number, e.g.
1N944B-2%, 1N945B-1%, 1N944B-1-1%, etc.
2.
Measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25
oC.
3.
The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specified mV
change at any discrete temperature between the established limits.
4.
Voltage measurements to be performed 15 seconds after application of dc current.
5.
The 1N941B, 1N942B, 1N943B, 1N944B, 1N945B also have military qualification to MIL-PRF-19500/157 up to the JANTXV level by
adding JAN, JANTX, or JANTXV prefixes to part numbers as well as “-1” suffix, e.g. JANTX1N944B-1, JANTXV1N945B-1, etc.
6.
Designate Radiation Hardened devices with “RH” prefix instead of “1N”, i.e. RH944B instead of 1N944B.
GRAPHS
Change
in
tempe
rature
coefficient
(mV/
o C)
The curve shown in Figure 1 is typical of the diode series and
greatly simplifies the estimation of the Temperature Coefficient
(TC) when the diode is operated at currents other than 7.5mA.
EXAMPLE: A diode in this series is operated at a current of
7.5mA and has specified Temperature Coefficient (TC) limits of
+/-0.002%/
oC. To obtain the typical Temperature Coefficient
limits for this same diode operated at a current of 6.0mA, the new
TC limits (%/
oC) can be estimated using the graph in FIGURE 1.
At a test current of 6.0mA the change in Temperature Coefficient
(TC) is approximately –0.0009%.
oC. The algebraic sum of +/-
0.002%
oC and –0.0009%/oC gives the new estimated limits of
+0.0011%/oC and -0.0029%/oC.
Change
in
tempe
rature
coefficient
(%/
o C)
IZ – Operating Current (mA)
FIGURE 1
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT
WITH CHANGE IN OPERATING CURRENT.
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2003
8-21-2003 REV A
相關PDF資料
PDF描述
JANTX1N945B 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35
JANTXV1N945BUR-1 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
JAN1N944BUR-1 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA
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