參數(shù)資料
型號： JANTX1N6808UEG2
廠商： VISHAY SEMICONDUCTORS
元件分類： 二極管(射頻、小信號、開關(guān)、功率)
英文描述： 1 A, 600 V, SILICON, SIGNAL DIODE
封裝： PLASTIC, DO-214BA, 2 PIN
文件頁數(shù)： 2/3頁
文件大?。?/td> 85K
代理商： JANTX1N6808UEG2
www.vishay.com
Document Number 88654
2
26-Mar-02
JAN1N6804UEG2 thru JAN1N6810UEG2
Vishay Semiconductors
formerly
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
I F
—
Instantaneous
Forward
Current
(A)
10
1
0.1
0.01
0.4
0.6
1.4
1.6
0.8
1.0
1.2
Pulse Width = 300
s
1% Duty Cycle
TJ = 25
°C
Fig. 2 – Typical Instantaneous
Forward Characteristics
Instantaneous Forward Voltage (V)
Fig. 1 – Forward Current Derating Curve
0
100
130
110
120
140
150
160
175
A
verage
Forward
Rectified
Current
(A)
Lead Temperature (
°C)
0.5
1.0
P.C.B. Mounted on
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
60 HZ Resistive or Inductive Load
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Minimum reverse breakdown voltage at 50
AVBR
55
110
220
440
660
880
1100
V
Maximum instantaneous forward voltage
at 1.0A
VF
1.1
V
TP = 300
s
at 3.0A
1.3
Maximum DC reverse current
TA = 25°C
IR
0.5
A
at rated DC blocking voltage
TA = 125°C50
Typical reverse recovery time at
trr
2.0
s
IF = 0.5A, IR = 1.0A, Irr = 0.25 A
Typical junction capacitance at 4.0V, 1MHz
CJ
15
pF
相關(guān)PDF資料
PDF描述
JANTX1N6808UEG2 1 A, 600 V, SILICON, SIGNAL DIODE
JAN1N6809UEG2 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214BA
JANTX1N6809UEG2 1 A, 800 V, SILICON, SIGNAL DIODE
JANTX1N6807UEG2 1 A, 400 V, SILICON, SIGNAL DIODE
JANTX1N6805UEG2 1 A, 100 V, SILICON, SIGNAL DIODE
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