參數(shù)資料
型號: JANTX1N6474
廠商: MICROSEMI CORP-SCOTTSDALE
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝: HERMETIC SEALED, GLASS, G, 2 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 232K
代理商: JANTX1N6474
Voidless-Hermetically-Sealed Unidirectional
Transient Suppressors
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2007
10-03-2007 REV C
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6469 thru 1N6476
1N6
469
1
N
6476
DESCRIPTION
APPEARANCE
This
series
of
industry
recognized
voidless-hermetically-sealed
Unidirectional
Transient Voltage Suppressor (TVS) designs is military qualified to MIL-PRF-
19500/552 and are ideal for high-reliability applications where a failure cannot be
tolerated. They provide a Working Peak “Standoff” Voltage selection from 5.0 to 51.6
Volts with 1500 W ratings. They are very robust in hard-glass construction and also
use an internal metallurgical bond identified as Category I for high reliability
applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These
devices are also available in a surface mount MELF package configuration by adding
a “US” suffix (see separate data sheet for 1N6469US thru 1N6476AUS). Microsemi
also offers numerous other TVS products to meet higher and lower peak pulse power
and voltage ratings in both through-hole and surface-mount packages.
“G” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
High surge current and peak pulse power provides
transient voltage protection for sensitive circuits
Triple-layer passivation
Internal “Category I” metallurgical bonds
Voidless hermetically sealed glass package
JAN/TX/TXV military qualifications available per MIL-
PRF-19500/552 by adding JAN, JANTX, or JANTXV
prefix
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “SP” prefix, e.g.
SP6469, SP6476, etc.
Surface Mount equivalents are also available in a
square-end-cap MELF configuration with a “US” suffix
(see separate data sheet)
Military and other high reliability transient protection
Extremely robust construction
Working Peak “Standoff” Voltage (V
WM) from 5.0 to
51.6 V
Available as 1500 W Peak Pulse Power (P
PP)
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per select levels in
IEC61000-4-5
Flexible axial-leaded mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method
1020
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating & Storage Temperature: -55oC to +175oC
Peak Pulse Power at 25oC: 1500 Watts @ 10/1000 s
(also see Figures 1,2 and 4)
Impulse repetition rate (duty factor): 0.01%
Forward Surge Current: 130 Amps@ 8.33 ms one-half
sine wave
Forward Voltage: 1.5 V @ 4 Amps dc and 4.8 V at
100 Amps (pulsed)
Steady-State Power: 3.0 W @ T
A = 25
oC (see note
below and Figure 4)
Thermal Resistance @ 3/8 inch lead length: 50.0 oC/W
Solder Temperatures: 260oC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)
over copper
MARKING: Body painted and part number, etc.
POLARITY: Cathode band
Tape & Reel option: Standard per EIA-296
Weight: 1270 mg
See package dimensions on last page
NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where TJ(MAX) is not exceeded.
相關PDF資料
PDF描述
JAN1N6470 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
JANTXV1N6471 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
JANTXV1N6476 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
JANTX1N6470 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
JAN1N6469 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
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