- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄61273 > JANTX1N645-1 0.15 A, SILICON, SIGNAL DIODE, DO-35 PDF資料下載
參數(shù)資料
| 型號(hào)： | JANTX1N645-1 |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.15 A, SILICON, SIGNAL DIODE, DO-35 |
| 封裝： | SIMILAR TO DO-35, 2 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 134K |
| 代理商： | JANTX1N645-1 |
Silicon Rectifier Diodes
Use Advantages
1 N645-I
thru
1 N649-I
DO-35 Glass Package
Used as a general purpose rectifier in power supplies, or for clipping and
steering applications.
High performance alternative to small signal diodes where space does not
permit
use of power rectifiers.
May be used in hostile environments where hermeticity and reliability are
important i.e. (Military and Aerospace). MlL-S-19500/240 approvals.
“S’ level screening capability to Source Control Drawings.
Features
Metallurgically
bonde d
Six Sigma quality
Humidity proof glass
q
Thermally matched system
q
No thermal fatigue
High surge capability
q
Sigma Bond
TM plated contacts
DO-35 Glass Package
(nominal dimensions)
glass
0.020”
0.50 m m
. . . . . . . . ----
..-.
‘
. . . . . . . . . . . . .
.
Length
“chi p
Dia.
+ -
25,4 mm
0145 ’
0070 ”
(Min )
mm
1,8
100% guaranteed solderability
q
(DO-213AA) SMD MELF commercial (LL) and MIL (U R-I ) types available
I Absolute Maximum Ratings
Symbol
Value
Unit
I
Power Dissipation at 3/8” from the body, T
L= 75
oC
P
tot
500
mWatts
I
Average Forward Rectified Current at T
L= 75
oC
I
400
mAmps
I
Text
Operating and Storage Temperature Range
To & s
-65 to 175
oC
Thermal Impedance (per Method 3101 of MIL-S-19500)
Z
JX
35
oC/W
I
Detail Specifications
Peak
Breakdown
Maximum
Forward
Maximum
Inverse
Voltage
Average Rectified Current
Voltage
Reverse Leakage Current
Surge
Junction
Voltage
(MIN.)
Drop
Current Capacitance
(MIN.)
@ IOOA
(lo)
(lo)
(V
F) @ IF = 400mA
(l
R) @ PlV
(IFSM)
@ -4V
(PlV)
(BV)
25° C
150° C (MIN.)
(MAX.) 25° C
150° c
(NOTE 1)
(Co)
Type
volts
Amps
Volts
A
Amps
pF
225
270
0.4
0.15
0.80
1.0
.050
25
5
20
300
360
0.4
0.15
0.80
1.0
.050
25
5
–
2
0
400
480
0.4
—
0.15
0.80
1.0
.050
25
5
20
1 N648
500
600
0.4
0.15
0.80
1.0
.050
25
5
2 0
—-
—————--
-.
—-
__________ _
600
720
0.4
0.15
0.80
1.0
.050
25
5
20
Note 1: TA=150°C ,Io= 150mAdc, 10 surges of 8.3 msec
To order military parts use the lN645/47/49-l numbers with the appropriate JAN, JTX or JTXV prefix
For MELF DO-213AA surface mount package, replace “IN” prefix with “LL” for commercial.
Telephone (508) 681-0392 qFAX (508) 681-9135
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTX1N647-1 | 0.15 A, SILICON, SIGNAL DIODE, DO-35 |
| JAN1N6639US | 0.3 A, SILICON, SIGNAL DIODE |
| JANS1N6641US | 0.3 A, SILICON, SIGNAL DIODE |
| JANTX1N6640US | 0.3 A, SILICON, SIGNAL DIODE |
| JANTXV1N6639US | 0.3 A, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANTX1N645UR-1 | 制造商:Microsemi Corporation 功能描述:Diode Switching 225V 0.4A 2-Pin DO-213AA 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 225V 0.4A 2PIN DO-213AA - Bulk 制造商:Microsemi 功能描述:Diode Switching 225V 0.4A 2-Pin DO-213AA |
| JANTX1N6461 | 制造商:Microsemi Corporation 功能描述: 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 5V 500W 2PIN E - Bulk 制造商:Semtech Corporation 功能描述: 制造商:Microsemi Corporation 功能描述:TVS DIODE 5VWM 9VC EAXIAL 制造商:Microsemi Corporation 功能描述:TVS UNIDIR 500W 5.6V AXIAL E |
| JANTX1N6461US | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 5V 500W 2-Pin E-MELF 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 5V 500W 2PIN MELF - Trays |
| JANTX1N6461US-TR | 制造商:Semtech Corporation 功能描述:Diode TVS Single Uni-Dir 6V 500W 2-Pin SMD T/R 制造商:Semtech 功能描述:Diode TVS Single Uni-Dir 6V 500W 2-Pin SMD T/R |
| JANTX1N6462 | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 6V 500W 2-Pin Case E 制造商:Semtech Corporation 功能描述:Diode TVS Single Uni-Dir 6V 500W 2-Pin 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR (TVS) - Bulk 制造商:Microsemi 功能描述:Diode TVS Single Uni-Dir 6V 500W 2-Pin Case E |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。