- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384553 > JANSR2N7480U3 (International Rectifier) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PDF資料下載
參數(shù)資料
| 型號(hào)： | JANSR2N7480U3 |
| 廠商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 中文描述： | 抗輻射功率MOSFET表面貼裝系統(tǒng)（SMD - 0.5） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 189K |
| 代理商： | JANSR2N7480U3 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
22*
21
88
75
0.6
±20
100
22
7.5
10
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5s)
1.0 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low Rdson and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
o
C
A
RADIATION HARDENED JANSR2N7480U3
POWER MOSFET 60V, N-CHANNEL
SURFACE MOUNT (SMD-0.5)
REF: MIL-PRF-19500/703
www.irf.com
1
* Current is limited by package
For footnotes refer to the last page
Product Summary
Part Number Radiation Level R
DS(on)
I
D
QPL Part Number
IRHNJ57034 100K Rads (Si) 0.030
22A* JANSR2N7480U3
IRHNJ53034 300K Rads (Si) 0.030
22A* JANSF2N7480U3
IRHNJ54034 600K Rads (Si) 0.030
22A* JANSG2N7480U3
IRHNJ58034 1000K Rads (Si) 0.038
22A* JANSH2N7480U3
Features:
Single Event Effect (SEE) Hardened
Ultra low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
SMD-0.5
IRHNJ57034
TECHNOLOGY
PD-93752C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANSF2N7480U3 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| JANSG2N7480U3 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| JANSH2N7480U3 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| JANSR2N7485U3 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| JANSR2N7486U3 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANSR2N7481U3 | 制造商:International Rectifier 功能描述:JANS CERTIFIED VERSION IRHNJ57130 - Rail/Tube |
| JANSR2N7482T3 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSR2N7483T3 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSR2N7485U3 | 制造商:International Rectifier 功能描述:130V 9999.000A HEXFET RADHARD - Rail/Tube |
| JANSR2N7486U3 | 制造商:International Rectifier 功能描述:FET - Rail/Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。