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參數(shù)資料
| 型號(hào)： | JANSR2N7431U |
| 英文描述： | 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package |
| 中文描述： | 60V的100kRad高可靠性單個(gè)N -溝道工貿(mào)硬化的貼片MOSFET的- 2封裝 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 311K |
| 代理商： | JANSR2N7431U |
IRHM7450, IRHM8450, JANSR-, JANSH-, 2N7270 Devices
2
www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
500
—
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown
—
0.6
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
0.45
VGS = 12V, ID = 7.0A
Resistance
—
0.50
VGS = 12V, ID = 11A
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
4.0
—
S ( )
VDS > 15V, IDS = 7.0A
IDSS
Zero Gate Voltage Drain Current
—
50
VDS= 0.8 x Max Rating,VGS=0V
—
250
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -20V
Qg
Total Gate Charge
—
150
VGS =12V, ID = 11A
Qgs
Gate-to-Source Charge
—
30
nC
VDS = Max Rating x 0.5
Qgd
Gate-to-Drain (‘Miller’) Charge
—
75
td(on)
Turn-On Delay Time
—
45
VDD = 250V, ID = 11A,
tr
Rise Time
—
190
RG = 2.35
td(off)
Turn-Off Delay Time
—
190
tf
Fall Time
—
130
LD
Internal Drain Inductance
—
8.7
—
LS
Internal Source Inductance
—
8.7
—
Ciss
Input Capacitance
—
4000
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
330
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
52
—
Pre-Irradiation
nA
nH
ns
A
Measured from drain
lead, 6mm (0.25 in)
from package to center
of die.
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
Modified MOSFET sym-
bol showing the internal
inductances.
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
11
ISM
Pulse Source Current (Body Diode)
——
44
VSD
Diode Forward Voltage
—
1.6
V
Tj = 25°C, IS =11A, VGS = 0V
trr
Reverse Recovery Time
—
1100
ns
Tj = 25°C, IF = 11A, di/dt ≤ 100A/s
QRR Reverse Recovery Charge
—
16
CVDD ≤ 50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
—
0.83
RthJA
Junction-to-Ambient
—
48
°C/W
RthCS
Case-to-Sink
—
0.21
—
Typical socket mount
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