參數資料
型號: JANSR2N7390
英文描述: -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
中文描述: - 200伏100kRad高可靠性單P溝道MOSFET的工貿硬化在TO - 205AF包
文件頁數: 5/8頁
文件大?。?/td> 129K
代理商: JANSR2N7390
www.irf.com
5
Pre-Irradiation
IRHF9230
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
400
800
1200
1600
2000
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
10
20
30
40
50
60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-4.0A
V
=-40V
DS
V
=-100V
DS
V
=-160V
DS
0.1
1
10
100
0.5
1.0
-V ,Source-to-Drain Voltage (V)
1.5
2.0
2.5
3.0
3.5
4.0
-
S
V = 0 V
T = 25 C
°
T = 150 C
0.1
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25 C
°
J
C
V , Drain-to-Source Voltage (V)
D
-
I
10us
100us
1ms
10ms
-
相關PDF資料
PDF描述
IRHG563110 TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 960MA I(D) | DIP
IRHG567110 TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 960MA I(D) | DIP
IRHM150 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-254AA
IRHM250 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-254AA
IRHM450 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 11.5A I(D) | TO-254AA
相關代理商/技術參數
參數描述
JANSR2N7390U 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk
JANSR2N7392 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk
JANSR2N7392U 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk
JANSR2N7394 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk
JANSR2N7394U 制造商:International Rectifier 功能描述:TRAN 100V 100K RAD - Rail/Tube