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參數(shù)資料
| 型號(hào)： | JANSR2N7269U |
| 英文描述： | 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package |
| 中文描述： | 200伏100kRad高可靠性單個(gè)N -溝道工貿(mào)硬化的貼片MOSFET的- 1封裝 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 440K |
| 代理商： | JANSR2N7269U |
www.irf.com
5
Pre-Irradiation
IRHF7130
Post-Irradiation
Fig 6.
Fig 6. Typical On-State Resistance Vs.
NeutronFluenceLevel
Fig 5.
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 7.
Fig 7. Typical Transient Response
of Rad Hard HEXFET During 1x1012
Rad (Si)/Sec Exposure
Fig 8b.
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
Fig 8a.
Fig 8a. Gate Stress of
VGSS Equals 12 Volts During
Radiation
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| JANSR2N7270 | 制造商:International Rectifier 功能描述:500V 11.000A HEXFET RADHARD - Rail/Tube |
| JANSR2N7270U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSR2N7292 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| JANSR2N7380 | 制造商:International Rectifier 功能描述:TRANSISTOR, HEXFE N CHANNEL - Rail/Tube 制造商:Microsemi Corporation 功能描述: |
| JANSR2N7380U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
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