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參數(shù)資料
| 型號(hào)： | JANSH2N7431U |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Transistor(HEXFET 晶體管) |
| 中文描述： | 的HEXFET晶體管（之HEXFET晶體管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 145K |
| 代理商： | JANSH2N7431U |
Product Summary
Part Number
IRHNA7064
IRHNA8064
BV
DSS
60V
60V
R
DS(on)
0.015
0.015
I
D
75*A
75*A
Features:
Radiation Hardened up to 1 x 10
6
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Lightweight
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRHNA7064, IRHNA8064
75*
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
56
356
300
2.4
±20
500
75*
30
2.5
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300( for 5 sec.)
3.3 (typical)
g
N-CHANNEL
MEGA RAD HARD
Pre-Irradiation
60Volt, 0.015
, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Ad-
ditionally, under
identical
pre- and post-irradiation
test conditions, International Rectifier’s RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as
high as 1 x 10
12
Rads (Si)/Sec, and return to normal
operation within a few microseconds. Since the RAD
HARD process utilizes International Rectifier’s pat-
ented HEXFET technology, the user can expect the
highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of par-
alleling and temperature stability of the electrical
parameters. They are well-suited for applications
such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers and high-en-
ergy pulse circuits in space and weapons environ-
ments.
o
C
A
8/25/98
www.irf.com
1
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
JANSR2N7431U
JANSH2N7431U
IRHNA7064
IRHNA8064
PD - 91416A
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