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參數(shù)資料
| 型號： | JANSG2N7433U |
| 英文描述： | 200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package |
| 中文描述： | 200伏600kRad高可靠性單個N -溝道工貿(mào)硬化的貼片MOSFET的- 2封裝 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 107K |
| 代理商： | JANSG2N7433U |
www.irf.com
7
Pre-Irradiation
IRHY7130CM
QG
QGS
QGD
VG
Charge
D.U.T.
VDS
ID
IG
3mA
VGS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b. Gate Charge Test Circuit
Fig13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V (B R )D S S
I AS
R G
IAS
0.01
tp
D.U.T
L
V DS
+
-
VDD
DR IV E R
A
15 V
20V
VGS
25
50
75
100
125
150
0
100
200
300
400
Starting T , Junction Temperature( C)
E
,
Single
Pulse
Avalanche
Energy
(mJ)
J
AS
°
ID
TOP
BOTTOM
6.4A
9.1A
14A
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