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參數(shù)資料
| 型號： | JANSF2N7423U |
| 英文描述： | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package |
| 中文描述： | - 200伏300kRad高可靠性單P溝道工貿(mào)硬化的貼片MOSFET的- 1封裝 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 126K |
| 代理商： | JANSF2N7423U |
IRHN9250, JANSR2N7423U
Pre-Irradiation
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance — — 0.33
VGS = -12V, ID = -14A
Gate Threshold Voltage
-2.0
Forward Transconductance
4.0
Zero Gate Voltage Drain Current
—
—
Min
-200
—
Typ
—
-0.24
Max Units
—
—
Test Conditions
VGS = 0V, ID =-1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
0.315
VGS = -12V, ID = -9.0A
VGS(th)
gfs
IDSS
—
—
—
—
-4.0
—
-25
-250
V
VDS = VGS, ID = -1.0mA
VDS >-15V, IDS = -9.0A
VDS= -160V ,VGS=0V
VDS = -160V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -14A
VDS = -100V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
200
45
85
60
240
225
220
—
nC
VDD = -100V, ID = -14A,
VGS =-12V, RG = 2.35
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4200
690
160
—
—
—
VGS = 0V, VDS = -25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJ-PCB
Junction-to-PC board
Min Typ Max
—
—
—
6.6
Units
Test Conditions
0.83
—
soldered to a 1” square copper-clad board
°C/W
Measured from the center of
drain pad to center of source pad
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
-14
-56
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-3.6
775
7.2
V
nS
μC
T
j
= 25°C, IS = -14A, VGS = 0V
Tj = 25°C, IF = -14A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
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