- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360958 > JANSF2N7390 -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package PDF資料下載
參數(shù)資料
| 型號： | JANSF2N7390 |
| 英文描述： | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package |
| 中文描述： | - 200伏300kRad高可靠性單P溝道MOSFET的工貿(mào)硬化在TO - 205AF包 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 129K |
| 代理商： | JANSF2N7390 |
IRHF9230
Pre-Irradiation
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance — — 0.92
VGS = -12V, ID = -4.0A
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-200
—
Typ
—
-0.25
Max Units
—
—
Test Conditions
VGS = 0V, ID =-1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
V
V/°C
—
—
0.80
VGS = -12V, ID = -2.4A
—
—
—
—
-4.0
—
-25
-250
V
VDS = VGS, ID = -1.0mA
VDS >-15V, IDS = -4.0A
VDS= -160V ,VGS=0V
VDS = -160V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -4.0A
VDS = -100V
2.5
—
—
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
-100
100
45
10
25
30
30
75
65
—
nC
VDD = -100V, ID = -4.0A,
VGS =-12V, RG = 7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1200
190
45
—
—
—
VGS = 0V, VDS = -25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
Min Typ Max
—
—
—
—
Units
Test Conditions
5.0
175
Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
-4.0
-16
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-5.0
400
1.6
V
nS
μC
T
j
= 25°C, IS = -4.0A, VGS = 0V
Tj = 25°C, IF = -4.0A, di/dt
≤
-100A/
μ
s
VDD
≤
-100V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
°C/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANSR2N7390 | -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package |
| IRHG563110 | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 960MA I(D) | DIP |
| IRHG567110 | TRANSISTOR | MOSFET | ARRAY | COMPLEMENTARY | 100V V(BR)DSS | 960MA I(D) | DIP |
| IRHM150 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-254AA |
| IRHM250 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-254AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANSF2N7390U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7392 | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7392U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7394U | 制造商:International Rectifier 功能描述:HIREL HEXFET RHD QPL - Bulk |
| JANSF2N7422U | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 22A 3SMD-1 - Rail/Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。