參數(shù)資料
型號(hào)： JANS2N3700
廠商： MICROSEMI CORP-LAWRENCE
元件分類： 小信號(hào)晶體管
英文描述： LOW POWER NPN SILICON TRANSISTOR
中文描述： 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
封裝： TO-18, 3 PIN
文件頁(yè)數(shù)： 5/20頁(yè)
文件大?。?/td> 128K
代理商： JANS2N3700
MIL-PRF-19500/560E
13
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
* Subgroup 1 2/
Visual and mechanical 3/
Examination
2071
n = 45 devices, c = 0
Solderability 3/, 4/
Resistance to solvents
3/, 4/, 5/
2026
1022
n = 15 leads, c = 0
n = 15 devices, c = 0
Temp Cycling 3/, 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Heremetic Seal 4/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical
measurements 4/
Group A, subgroup 2
Bond strength 3/, 5/
2037
Precondition
TA = +250
°C at t = 24 hrs or
TA = +300
°C at t = 2 hrs
n = 11 wires, c = 0
Decap internal visual
(design verification)
2075
n = 4 device, c = 0
Subgroup 1
Visual and mechanical
inspection
2071
Subgroup 2
Breakdown voltage,
collector to emitter
3011
Bias condition D; IC = 50 mA dc;
pulsed (see 4.5.1)
V(BR)CEO
100
V dc
Collector to emitter cutoff
current
3041
Bias condition D; VCE = 100 V dc
ICEO
100
A dc
Collector to emitter cutoff
current
3041
Bias condition A; VBE = 1.5 V dc; VCE
= 90 V dc
ICEX1
10
A dc
Collector to base cutoff
current
3036
Bias condition D; VCB = 100 V dc
ICBO
10
A dc
See footnote at end of table.
相關(guān)PDF資料
PDF描述
JANTX1N6045ATR LEVEL CONTROLLER; Depth, external:70mm; Dielectric strength, VAC:1500V; Length / Height, external:50mm; Power consumption:3.2VA; Temp, op. max:55(degree C); Temp, op. min:-10(degree C); Voltage, input max:240V; Voltage, input
JANTXV1N6045ATR LEVEL CONTROLLER; Depth, external:70mm; Length / Height, external:50mm; Temp, op. max:55(degree C); Temp, op. min:-10(degree C); Voltage, input max:240V; Voltage, input min:110V; Width, external:38mm
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