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參數(shù)資料
| 型號： | JANS1N829UR-1 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA |
| 封裝： | HERMETIC SEALED, GLASS, LL34, MELF-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 215K |
| 代理商： | JANS1N829UR-1 |
1
Revision Date: 2/2/2009
New Product
Temperature Compensated
Zener Reference Diode Series
1N821UR thru 1N829AUR & 1N821UR-1 thru 1N829UR-1
Maximum Ratings
Operating & Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +50°C
Power Derating: 4 mW / °C above +50°C
REVERSE LEAKAGE CURRENT
lR = 2 μA @ 25°C & VR = 3 Vdc
Features
1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1 and 1N829UR-1
and A versions available in JAN, JANTX, JANTXV, JANS
Metallurgically Bonded, Double Plug Construction
Normal
Zener
Maximum Zener
Voltage Temperature
Effective
JEDEC
Zener
Test
Impedance
Stability
Temperature
TYPE
Voltage
Current
(Note 1)
3V
ZT
Coefficient
Number
Vz@ IZT
IZT
ZZT
-55° to +100°C
(Note 2)
(Note1)
Volts
mA
Ohms
mV
%/°C
1N821UR
5.9—6.5
7.5
15
96
0.01
1N821AUR
5.9—6.5
7.5
10
96
0.01
1N822UR
5.9—6.5
7.5
15
96
0.01
1N823UR
5.9—6.5
7.5
15
48
0.005
1N823AUR
5.9—6.5
7.5
10
48
0.005
1N824UR
5.9—6.5
7.5
15
48
0.005
1N825UR
5.9—6.5
7.5
15
19
0.002
1N825AUR
5.9—6.5
7.5
10
19
0.002
1N826UR
6.2—6.9
7.5
15
20
0.002
1N827UR
5.9—6.5
7.5
15
9
0.001
1N827AUR
5.9—6.5
7.5
10
9
0.001
1N828UR
6.2—6.9
7.5
15
10
0.001
1N829UR
5.9—6.5
7.5
15
5
0.0005
1N829AUR
5.9—6.5
7.5
10
5
0.0005
Electrical Specifications @ +25 C (Unless Otherwise Specified)
Double Anode: Electrical Specifications Apply Under Both Bias Polarities.
NOTE 1:
Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current equal to 10% of lZT.
NOTE 2:
The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the
specified mV at any discrete temperature between the established limits, per JEDEC standard No. 5.
Outline Drawing
LEADED DESIGN DATA
CASE: DO – 213AA, Hermetically sealed glass case.
(MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion
(COE) Of this Device is Approximately +6 PPM/°C. The COE of the
Mounting Surface System Should Be Selected To Provide A Suitable
Match With This Device.
D
G
G1
F
S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTXV1N829UR-1 | 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA |
| JANTXV1N829AUR-1 | 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA |
| JANS1N829UR-1 | 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA |
| JAN1N825UR-1 | 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA |
| JAN1N829UR-1 | 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANS1N935B-1 | 制造商:Microsemi Corporation 功能描述:0TC REFERENCE VOLTAGE ZENER - Waffle Pack |
| JANS1N935BUR-1 | 制造商:Microsemi Corporation 功能描述:0TC REFERENCE VOLTAGE ZENER - Waffle Pack |
| JANS1N937B-1 | 制造商:Microsemi Corporation 功能描述:0TC REFERENCE VOLTAGE ZENER - Waffle Pack |
| JANS1N937BUR-1 | 制造商:Microsemi Corporation 功能描述:0TC REFERENCE VOLTAGE ZENER - Waffle Pack |
| JANS1N938B-1 | 制造商:Microsemi Corporation 功能描述:0TC REFERENCE VOLTAGE ZENER - Waffle Pack |
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