參數資料
型號： JANS1N6677UR-1
廠商： MICROSEMI CORP-LAWRENCE
元件分類： 二極管(射頻、小信號、開關、功率)
英文描述： 0.2 A, 40 V, SILICON, SIGNAL DIODE, DO-213AA
封裝： DO-213AA
文件頁數： 1/2頁
文件大小： 47K
代理商： JANS1N6677UR-1
6
LAKE
STREET,
LAWRENCE,
MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
161
MAXIMUM
CDI
WORKING PEAK
MAXIMUM REVERSE
CAPACITANCE @
TYPE
REVERSE
MAXIMUM FORWARD VOLTAGE
LEAKAGE CURRENT
VR = 0 VOLTS
NUMBER
VOLTAGE
AT RATED VOLTAGE
f =1.0 MHz
VRWM
VF @ 20 mA VF @ 200 mA VF @ 630 mA
IR @ +25°C
IR @ +100°C
CT
VOLTS
A
mA
PICO FARADS
CDLL6675
20
0.37
0.50
0.70
5.0
0.6
50
CDLL6676
30
0.37
0.50
0.70
5.0
0.6
50
CDLL6677
40
0.37
0.50
0.70
5.0
0.6
50
CDLL0.2A20
20
0.37
0.50
0.70
5.0
0.6
50
CDLL0.2A30
30
0.37
0.50
0.70
5.0
0.6
50
CDLL0.2A40
40
0.37
0.50
0.70
5.0
0.6
50
MAXIMUM RATINGS, 0.2 AMP DEVICES
Operating Temperature: -65°C to +125°C
Storage Temperature: -65°C to +150°C
Average Rectified Forward Current: 0.2 AMP @ TEC = +100°C
Derating: 8.0 mA / °C above +100°C
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
MAXIMUM RATINGS, 0.5 AMP DEVICES
Operating Temperature: -65°C to +125°C
Storage Temperature: -65°C to +150°C
Average Rectified Forward Current: 0.5 AMP @ TEC = +75°C
Derating: 6.67 mA / °C above TEC = +75°C
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
MAXIMUM
CDI
WORKING PEAK
MAXIMUM
MAXIMUM REVERSE
CAPACITANCE @
TYPE
REVERSE
FORWARD VOLTAGE
LEAKAGE CURRENT
VR = 0 VOLTS
NUMBER
VOLTAGE
AT RATED VOLTAGE
f =1.0 MHz
VRWM
VF @ 0.1A
VF @ 0.5A
IR @ +25°C
IR @ +100°C
CT
VOLTS
A
mA
PICO FARADS
CDLL0.5A20
20
0.50
0.65
10.0
1.0
50
CDLL0.5A30
30
0.50
0.65
10.0
1.0
50
CDLL0.5A40
40
0.50
0.65
10.0
1.0
50
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
100 C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (ZJX): 20
C/W maximum
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
D
1.60
1.70
0.063 0.067
F
0.41
0.55
0.016 0.022
G
3.30
3.70
.130
.146
G1
2.54 REF.
.100 REF.
S
0.03 MIN.
.001 MIN.
1N6677UR-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/610
0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS
HERMETICALLY SEALED
LEADLESS PACKAGE FOR SURFACE MOUNT
METALLURGICALLY BONDED
DOUBLE PLUG CONSTRUCTION
1N6677UR-1
and
CDLL6675 thru CDLL6677
and
CDLL0.2A20 thru 40
and
CDLL0.5A20 thru 40
相關PDF資料
PDF描述
JANS1N6677UR-1 0.2 A, SILICON, SIGNAL DIODE, DO-213AA
JANTXV1N6677UR-1 0.2 A, 40 V, SILICON, SIGNAL DIODE, DO-213AA
JANTX1N6677UR-1 0.2 A, SILICON, SIGNAL DIODE, DO-213AA
JANTXV1N6677UR-1 0.2 A, SILICON, SIGNAL DIODE, DO-213AA
JANTX1N6677UR-1 0.2 A, SILICON, SIGNAL DIODE, DO-213AA
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