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參數(shù)資料
| 型號： | JANS1N6642US |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.3 A, SILICON, SIGNAL DIODE |
| 封裝： | SURFACEMOUNT PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 70K |
| 代理商： | JANS1N6642US |
V BR
V RWM
V F1
V F2 @ I F2
tfr
trr
TYPES
@ IR
IFM
IF
IR = 10 mA
=100 A
=10 mA
IF = 10 mA
(Pulsed)
=50 mA
IREC = 1 mA
V (pk)
V dc
mA
ns
1N6638U & US
150
125
0.8
1.1
200
20
4.5
1N6642U & US
100
751.0
1.2
100
20
5
.0
1N6643U & US
755
0
1.0
1.2
100
20
6.0
I R1
I R2
I R3
I R4
C T1
C T2
TYPES
V R@V R
V R = 20 V
V R = V RWM
V R =V R =
= 20 V
= V RWM
TA = 150°C
0V
1.5V
nA dc
A dc
pF
1N6638U & US
350.5
5
0
100
2.52.0
1N6642U & US
25
0.5
50
100
5.0
2.8
1N6643U & US
50
0.5
75
160
5.0
2.8
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA
Derating: 4.6 mA/°C Above TEC = + 110°C
Surge Current: I
FSM = 2.5A, half sine wave, P
w = 8.3ms
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
1N6638US,1N6642US, 1N6643US AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/578
1N6638U,1N6642U, 1N6643U AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/578
SWITCHING DIODES
NON-CAVITY GLASS PACKAGE
METALLURGICALLY BONDED
1N6638U & US
1N6642U & US
1N6643U & US
DESIGN DATA
CASE: D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/578
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
50 °C/W maximum at L = 0
THERMAL IMPEDANCE: (ZOJX): 25
°C/W maximum
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN MAX
D
1.78
2.16
0.070 0.085
F
0.48
0.71
0.019 0.028
G
4.19
4.95
0.165 0.195
S
0.08MIN.
0.003MIN.
FIGURE 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTX1N6642U | 0.3 A, SILICON, SIGNAL DIODE |
| JANTXV1N6642U | 0.3 A, SILICON, SIGNAL DIODE |
| JAN1N6643U | 0.3 A, SILICON, SIGNAL DIODE |
| JANS1N6642U | 0.3 A, SILICON, SIGNAL DIODE |
| JANS1N6638U | 0.3 A, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JANS1N6642US/T/R | 制造商:Microsemi Corporation 功能描述:TAPE/REEL P/N - Tape and Reel |
| JANS1N6643 | 制造商:Microsemi Corporation 功能描述:SIGNAL OR COMPUTER DIODE - Waffle Pack |
| JANS1N6643U | 制造商:Microsemi Corporation 功能描述:Diode Switching 50V 0.3A 2-Pin B-MELF 制造商:Microsemi Corporation 功能描述:SIGNAL OR COMPUTER DIODE - Waffle Pack |
| JANS1N6643US | 制造商:Microsemi Corporation 功能描述:Diode Switching 50V 0.3A 2-Pin B-MELF |
| JANS1N6660CAT1 | 制造商:International Rectifier 功能描述:45V 35.000A OUTPUT - Rail/Tube |
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