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參數(shù)資料
| 型號： | JANS1N649-1 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.4 A, SILICON, SIGNAL DIODE, DO-35 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 121K |
| 代理商： | JANS1N649-1 |
DESIGN DATA
CASE: Hermetically sealed, Glass “A”
Body per MIL-PRF- 19500/406
D-5A
LEAD MATERIAL: Copper clad steel
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJL): 42
°C/W maximum at L = .375
THERMAL IMPEDANCE: (ZOJX): 4.5
°C/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION: Any
FIGURE 1
0.060/0.085
1.52/2.16
0.125/0.160
3.18/4.06
0.800
20.32
0.028/0.032
0.71/0.81
POLARITY
BAND
(CATHODE)
71
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
ZENER
TEST
DYNAMIC
KNEE
TEST
REVERSE
TEST
MAXIMUM VZ (REG) MAXIMUM
VOLTAGE CURRENT IMPEDENCE IMPEDENCE CURRENT CURRENT VOLTAGE CURRENT
VZ
SURGE
TYPE
±5%
IZT
(MAX.)
IZK
(MAX.)
VR
IZM
VZ
ZZT@IZT
ZZK@IZT
IR@VR
VOLTS
mA
OHMS
mA
A
VOLTS
MA
VOLTS
AMPS
1N6485
3.3
76.0
10
400
1.0
50
1.0
433
.90
4.2
1N6486
3.6
69.0
10
400
1.0
50
1.0
397
.80
3.9
1N6487
3.9
64.0
9
400
1.0
35
1.0
366
.75
3.6
1N6488
4.3
58.0
9
400
1.0
5.0
1.0
332
.70
3.3
1N6489
4.7
53.0
8
500
1.0
4.0
1.0
304
.60
3.0
1N6490
5.1
49.0
7
500
1.0
280
.50
2.7
1N6491
5.6
45.0
5
600
1.0
0.5
2.0
255
.40
2.5
1N4460
6.2
40.0
4
200
1.0
10.0
3.72
230
.35
2.3
1N4461
6.8
37.0
2.5
200
1.0
5.0
4.08
210
.30
2.1
AVAILABLE IN
JAN, JANTX, JANTXV, AND JANS
PER MIL-PRF-19500/406
1.5 WATT ZENER DIODES
NON CAVITY CONSTRUCTION
METALLURGICALLY BONDED
1N6485
THRU
1N6491
AND
1N4460
AND
1N4461
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +200°C
Power Dissapation: 1.5W @ TA=+25°C
Power Derating: 10mW/°C above TA=+25°C
Forward Voltage: 1.0 V dc @ IF=200mA dc
1.5 V dc @ IF=1A dc
NOTE: Zener voltage is measured with the device junction in thermal equilibrium at an
ambient temperature of 25
°C ± 3°C.
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