參數(shù)資料
型號: JANS1N5819US-1
廠商: MICROSEMI CORP-LAWRENCE
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 1 A, 45 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED PACKAGE-2
文件頁數(shù): 1/2頁
文件大?。?/td> 40K
代理商: JANS1N5819US-1
WORKING PEAK
MAXIMUM REVERSE
CDI
REVERSE
MAXIMUM FORWARD VOLTAGE
LEAKAGE CURRENT
TYPE
VOLTAGE
AT RATED VOLTAGE
NUMBER
VRWM
VF@0.1A
VF@1.0A
VF@3.1A
I R@25°C
I R@100°C
VOLTS
mA
DSB5817
20
0.36
0.60
0.9
0.10
5.0
DSB5818
30
0.36
0.60
0.9
0.10
5.0
1N5819
40
0.36
0.60
0.9
0.10
5.0
J,JX,JV & JS
45
0.34
0.49
0.8
0.05
5.0
5819-1
1N6759
60
0.38
0.69
NA
0.10
6.0
1N6760
80
0.38
0.69
NA
0.10
6.0
1N6761
100
0.38
0.69
NA
0.10
6.0
J,JX,JV & JS
100
0.38
0.69
NA
0.10
12.0
6761-1
DSB1A20
20
0.36
0.60
0.9
0.10
5.0
DSB1A30
30
0.36
0.60
0.9
0.10
5.0
DSB1A40
40
0.36
0.60
0.9
0.10
5.0
DSB1A50
50
0.36
0.60
0.9
0.10
5.0
DSB1A60
60
0.38
0.69
NA
0.10
12.0
DSB1A80
80
0.38
0.69
NA
0.10
12.0
DSB1A100
100
0.38
0.69
NA
0.10
12.0
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
65
MAXIMUM RATINGS
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +150°C
Average Rectified Forward Current: 1.0 AMP @TL +55°C, L = 3/8”
Derating: 14 mA / °C above TL = +55°C, L = 3/8”
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed, DO – 41
LEAD MATERIAL: Copper clad steel
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC): 70
°C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (ZOJX): 12
°C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING POSITION: Any
1N5819-1 AND 1N6761-1AVAILABLE IN
JAN,JANTX, JANTXV,
AND JANS PER MIL-PRF-19500/586
1 AMP SCHOTTKY BARRIER RECTIFIERS
HERMETICALLY SEALED
METALLURGICALLY BONDED
1N5819
and
DSB5817 and DSB5818
and
1N6759 thru 1N6761
and
DSB1A20 thru DSB1A100
相關(guān)PDF資料
PDF描述
JANS1N5819-1 1 A, 45 V, SILICON, SIGNAL DIODE, DO-41
JAN1N6761-1 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
JANS1N6761-1 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
JANTXV1N5819-1 1 A, 45 V, SILICON, SIGNAL DIODE, DO-41
JAN1N5822US 3 A, SILICON, RECTIFIER DIODE
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