參數(shù)資料
型號(hào)： JANS1N5312-1
廠商： MICROSEMI CORP
元件分類： 穩(wěn)流二極管
英文描述： 3.9 mA, SILICON, CURRENT REGULATOR DIODE, DO-7
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 32K
代理商： JANS1N5312-1
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
59
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specied
MINIMUM
DYNAMIC
KNEE
MAXIMUM
REGULATOR CURRENT
IMPEDANCE
LIMITING
TYPE
l p (mA) @ VS = 25V
@VS = 25V
@VK = 6.0 V
VOLTAGE
NUMBER
ZS (M)
ZK (M)
@ lL = 0.8 lp (min)
NOM
MIN
MAX
(Note 1)
(Note 2)
VL (VOLTS)
1N5283
0.22
0.198
0.242
25.0
2.75
1.00
1N5284
0.24
0.216
0.264
19.0
2.35
1.00
1N5285
0.27
0.243
0.297
14.0
1.95
1.00
1N5286
0.30
0.270
0.330
9.0
1.60
1.00
1N5287
0.33
0.297
0.363
6.6
1.35
1.00
1N5288
0.39
0.351
0.429
4.10
1.00
1.05
1N5289
0.43
0.387
0.473
3.30
0.870
1.05
1N5290
0.47
0.423
0.517
2.70
0.750
1.05
1N5291
0.56
0.504
0.616
1.90
0.560
1.10
1N5292
0.62
0.558
0.682
1.55
0.470
1.13
1N5293
0.68
0.612
0.748
1.35
0.400
1.15
1N5294
0.75
0.675
0.825
1.15
0.335
1.20
1N5295
0.82
0.738
0.902
1.00
0.290
1.25
1N5296
0.91
0.819
1.001
0.880
0.240
1.29
1N5297
1.00
0.900
1.100
0.800
0.205
1.35
1N5298
1.10
0.990
1.210
0.700
0.180
1.40
1N5299
1.20
1.08
1.32
0.640
0.155
1.45
1N5300
1.30
1.17
1.43
0.580
0.135
1.50
1N5301
1.40
1.26
1.54
0.540
0.115
1.55
1N5302
1.50
1.35
1.65
0.510
0.105
1.60
1N5303
1.60
1.44
1.76
0.475
0.092
1.65
1N5304
1.80
1.62
1.98
0.420
0.074
1.75
1N5305
2.00
1.80
2.20
0.395
0.061
1.85
1N5306
2.20
1.98
2.42
0.370
0.052
1.95
1N5307
2.40
2.16
2.64
0.345
0.044
2.00
1N5308
2.70
2.43
2.97
0.320
0.035
2.15
1N5309
3.00
2.70
3.30
0.300
0.029
2.25
1N5310
3.30
2.97
3.63
0.280
0.024
2.35
1N5311
3.60
3.24
3.96
0.265
0.020
2.50
1N5312
3.90
3.51
4.29
0.255
0.017
2.60
1N5313
4.30
3.87
4.73
0.245
0.014
2.75
1N5314
4.70
4.23
5.17
0.235
0.012
2.90
NOTE 1
ZS is derived by superimposing A 90Hz RMS signal equal to 10% of VS on VS
NOTE 2
ZK is derived by superimposing A 90Hz RMS signal equal to 10% of VK on VK
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ TL= +50°C, L = 3/8”
Power Derating: 4 mW / °C above +50°C
Peak Operating Voltage: 100 Volts
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass
case. DO – 7 outline.
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
250
°C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (ZOJX): 25
°C/W maximum
POLARITY: Diode to be operated with
the banded (Cathode) end negative.
WEIGHT: 0.2 grams.
MOUNTING POSITION: Any.
1N5283-1 THRU 1N5314-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/463
CURRENT REGULATOR DIODES
HIGH SOURCE IMPEDANCE
METALLURGICALLY BONDED
DOUBLE PLUG CONSTRUCTION
1N5283 thru 1N5314
and
1N5283-1 thru 1N5314-1
相關(guān)PDF資料
PDF描述
JANTX1N5286-1 0.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-7
JANTXV1N5297-1 1 mA, SILICON, CURRENT REGULATOR DIODE, DO-7
JANTX1N5300-1 1.3 mA, SILICON, CURRENT REGULATOR DIODE, DO-7
JANS1N5296-1 0.91 mA, SILICON, CURRENT REGULATOR DIODE, DO-7
JANTX1N5298-1 1.1 mA, SILICON, CURRENT REGULATOR DIODE, DO-7
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