參數(shù)資料
型號(hào)： JANS1N5309-1
廠商： MICROSEMI CORP-LAWRENCE
元件分類： 穩(wěn)流二極管
英文描述： 3 mA, SILICON, CURRENT REGULATOR DIODE, DO-35
封裝： DO-35, 2 PIN
文件頁數(shù)： 1/1頁
文件大小： 24K
代理商： JANS1N5309-1
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01844
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
CURRENT REGULATOR DIODES
– HIGH SOURCE IMPEDANCE
– METALLURGICALLY BONDED
– DOUBLE PLUG CONSTRUCTION
Qualified per MIL-PRF-19500/463
LDS-0159 Rev. 1 (100435)
Page 1 of 3
DEVICES
* 1N5283 Thru 1N5314
1N5283-1 Thru 1N5314-1
* These devices are only available as Commercial Level Product.
QUALIFIED LEVELS
JAN
JANTX
JANTXV
JANS
MAXIMUM RATING AT 25°C
Operating Temperature:
-65°C to +175°C
Storage Temperature:
-65°C to +175°C
DC Power Dissipation:
500mW @ +50°C @ TL = 3/8”
Power Derating:
4mW / °C above +50°C
Peak Operating Voltage:
100 Volts
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
TYPE
NUMBER
REGULATOR CURRENT
Ip (mA) @ VS = 25V
NOM
MIN
MAX
MINIMUM DYNAMIC
IMPEDANCE
@ VS = 25
ZS (M)
(Note 1)
MINIMUM KNEE
IMPEDANCE
@ VK = 6.0V
ZK (M)
(Note 2)
MAXIMUM
LIMITING
VOLTAGE
@ IL = 0.8 Ip (min)
VL (VOLTS)
1N5283
1N5284
1N5285
1N5286
1N5287
0.22
0.24
0.27
0.30
0.33
0.198
0.216
0.243
0.270
0.297
0.242
0.264
0.297
0.330
0.363
25.0
19.0
14.0
9.0
6.6
2.75
2.35
1.95
1.60
1.35
1.00
1N5288
1N5289
1N5290
1N5291
1N5292
0.39
0.43
0.47
0.56
0.62
0.351
0.387
0.423
0.504
0.558
0.429
0.473
0.517
0.616
0.682
4.10
3.30
2.70
1.90
1.55
1.00
0.870
0.750
0.560
0.470
1.05
1.10
1.13
1N5293
1N5294
1N5295
1N5296
1N5297
0.68
0.75
0.82
0.91
1.00
0.612
0.675
0.738
0.819
0.900
0.748
0.825
0.902
1.001
1.100
1.35
1.15
1.00
0.880
0.800
0.400
0.335
0.290
0.240
0.205
1.15
1.20
1.25
1.29
1.35
1N5298
1N5299
1N5300
1N5301
1N5302
1.10
1.20
1.30
1.40
1.50
0.990
1.08
1.17
1.26
1.35
1.210
1.32
1.43
1.54
1.65
0.700
0.640
0.580
0.540
0.510
0.180
0.155
0.135
0.115
0.105
1.40
1.45
1.50
1.55
1.60
1N5303
1N5304
1N5305
1N5306
1N5307
1.60
1.80
2.00
2.20
2.40
1.44
1.62
1.80
1.98
2.16
1.76
1.98
2.20
2.42
2.64
0.475
0.420
0.395
0.370
0.345
0.092
0.074
0.061
0.052
0.044
1.65
1.75
1.85
1.95
2.00
1N5308
1N5309
1N5310
1N5311
1N5312
2.70
3.00
3.30
3.60
3.90
2.43
2.70
2.97
3.24
3.51
2.97
3.30
3.63
3.96
4.29
0.320
0.300
0.280
0.265
0.255
0.035
0.029
0.024
0.020
0.017
2.15
2.25
2.35
2.50
2.60
1N5313
1N5314
4.30
4.70
3.87
4.23
4.73
5.17
0.245
0.235
0.014
0.012
2.75
2.90
NOTE 1: ZS is derived by superimposing A 90Hz RMS signal equal to 10% of VS on VS
NOTE 2: ZK is derived by superimposing A 90Hz RMS signal equal to 10% of VK on VK
DO-35
相關(guān)PDF資料
PDF描述
JANS1N5314-1 4.7 mA, SILICON, CURRENT REGULATOR DIODE, DO-35
JANTXV1N5297-1 1 mA, SILICON, CURRENT REGULATOR DIODE, DO-35
JANTXV1N5301-1 1.4 mA, SILICON, CURRENT REGULATOR DIODE, DO-35
JAN1N5294-1 0.75 mA, SILICON, CURRENT REGULATOR DIODE, DO-35
JAN1N5312-1 3.9 mA, SILICON, CURRENT REGULATOR DIODE, DO-35
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