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參數(shù)資料
| 型號(hào)： | JANHCE1N5806 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 2.5 AMPS FAST RECOVERY RECTIFIER CHIP 50 - 150 VOLTS |
| 中文描述： | 2.5 A, SILICON, RECTIFIER DIODE |
| 封裝： | DIE-1 |
| 文件頁數(shù)： | 19/28頁 |
| 文件大?。?/td> | 202K |
| 代理商： | JANHCE1N5806 |
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MIL-PRF-19500/420H
19
* TABLE II. Group E inspection (all quality levels) for qualification and requalification only.
Inspection
MIL-STD-750
Sampling
plan
Method
1056
Conditions
Subgroup 1
Thermal shock
20 cycles, condition D except low temperature shall be
achieved using liquid nitrogen (-195
°
C). Perform a visual for
cracked glass.
500 cycles, condition C, -65
°
C to +175
°
C.
See table I, subgroup 2 herein.
45 devices
c = 0
Temperature cycling
Electrical measurements
Subgroup 2
Steady state dc blocking life
Electrical measurements
* Subgroup 3
1051
22 devices
c = 0
1048
1,000 hours, condition A; V
R
= V
RWM
See table I, subgroup 2 and table III herein.
3 devices
c = 0
DPA (Decap analysis)
2101
Cross section and scribe and break.
Separate samples shall be used for each test.
* Subgroup 4
Thermal impedance
curves
Each supplier shall submit their (typical) maximum design
thermal impedance curves. In addition, optional test
conditions and Z
limit shall be provided to the qualifying
activity in the qualification report.
See figures 10, 11, and 12;
T
J
≤
120
°
C; L = .375 inch;
T
L
= 55
°
C; I
O
= 5 A dc.
Junction temperature
rise (see 4.5.2.1)
Subgroup 5
Barometric pressure,
reduced (altitude
operation)
Electrical measurement
22 devices
c = 0
1001
Pressure (see 1.3); t = 1 min. DC method;
V
R
= V
RWM
(see 1.3); I
R1
= 1.0
μ
A dc maximum
See table I, subgroup 2 and table III herein.
* Subgroup 6
ESD
See footnotes at end of table.
1020
n = 3, c = 0
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