參數(shù)資料
型號(hào)： JAN2N6902
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-204AA
中文描述： 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 12A條（?。﹟對(duì)204AA
文件頁(yè)數(shù)： 5/23頁(yè)
文件大?。?/td> 135K
代理商： JAN2N6902
MIL-PRF-19500/545D
13
4.5.2. Thermal resistance. Thermal resistance measurements shall be conducted in accordance with
method 3131 of MIL-STD-750. The following details shall apply:
a.
Collector current magnitude during power application shall be 500 mA minimum dc.
b.
Collector to emitter voltage magnitude shall be 10 V dc.
c.
Reference temperature measuring point shall be the case.
d.
Reference temperature measuring point shall be within the range +25
°C ≤ T
R ≤ +35°C. The chosen
reference temperature shall be recorded before the test is started.
e.
Mounting arrangement shall be with heat sink to case.
f.
Maximum limit of RθJC shall be 15.0°C/W for (TO-205) and 1.75°C/W for (U3).
4.5.3. Thermal response (VBE measurements). The
V
BE measurements shall be performed in accordance
with method 3131 of MIL-STD-750. The
V
BE conditions (IH and VH) and maximum limit shall be derived by each
vendor. The chosen
V
BE measurement and conditions for each device in the qualification lot shall be submitted in
the qualification report and a thermal response curve shall be plotted. The chosen
V
BE shall be considered final
after the manufacturer has had the opportunity to test five consecutive lots. One-hundred percent safe operating
area (SOA) testing may be performed in lieu of thermal response testing herein provided that the appropriate
conditions of temperature, time, current, and voltage to achieve die attach integrity are approved by the qualifying
activity. The following parameter measurements shall apply:
a. IM measurement ......................................................................... 10 mA.
b. VCE measurement voltage ......................................................... 16 V (same as VH).
c. IH collector heating current ......................................................... 1 A minimum.
d. VH collector-emitter heating voltage ........................................... 16 V minimum.
e. tH heating time ............................................................................ 10 ms.
f. tMD measurement delay time ...................................................... 50 s.
g. tSW sample window time ............................................................ 10 s maximum.
相關(guān)PDF資料
PDF描述
JAN2N6904 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-204AA
JAN2N6987 TRANSISTOR | BJT | ARRAY | INDEPENDENT | 60V V(BR)CEO | 600MA I(C) | TO-116
JAN2N6987U TRANSISTOR | BJT | ARRAY | INDEPENDENT | 60V V(BR)CEO | 600MA I(C) | LLCC
JAN2N6988 TRANSISTOR | BJT | ARRAY | INDEPENDENT | 60V V(BR)CEO | 600MA I(C) | FP
JAN2N6989 TRANSISTOR | BJT | ARRAY | INDEPENDENT | 50V V(BR)CEO | 800MA I(C) | TO-116
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JAN2N692 制造商:Microsemi Corporation 功能描述:Thyristor SCR 800V 150A 3-Pin TO-208AA 制造商:Microsemi Corporation 功能描述:SILICON POWER THYRISTOR - Bulk
JAN2N696 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 40V 3PIN TO-5 - Bulk 制造商: 功能描述:
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