- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄353839 > JAN2N6800 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3A I(D) | TO-39 PDF資料下載
參數(shù)資料
| 型號(hào)： | JAN2N6800 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3A I(D) | TO-39 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 400V五（巴西）直| 3A條（丁）| TO - 39封裝 |
| 文件頁數(shù)： | 19/19頁 |
| 文件大?。?/td> | 103K |
| 代理商： | JAN2N6800 |
MIL-PRF-19500/512E
9
4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see
table IV of
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
(1) 3c
Required (see 4.3.2)
9
hFE2, ICBO2
Not applicable
11
ICBO2; hFE2; ICBO2 = 100 percent of
initial value or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
ICBO2 and hFE2
12
See 4.3.1
13
Subgroups 2 and 3 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
Subgroup 2 of table I herein;
ICBO2 = 100 percent of initial value
or 2 nA dc, whichever is greater;
hFE2 = 15 percent change from initial value.
(1) Thermal impedance may be performed any time after sealing provided temperature cycling is performed in
accordance with MIL-PRF-19500, screen 3 prior to this thermal test.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in 4.5 of
MIL-STD-750; VCB = 10-20 V dc; power shall be applied to achieve TJ = 135°C minimum and a minimum power
dissipation = 75 percent of maximum rated PT (see 1.3). NOTE: No heat sink or forced air cooling on the devices
shall be permitted.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JAN2N6802 | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3.5A I(D) | TO-39 |
| JAN2N6804 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 11A I(D) | TO-204AA |
| JAN2N6806 | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6.5A I(D) | TO-204AA |
| JAN2N6896 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-204AA |
| JAN2N6898 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JAN2N6800E3 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 |
| JAN2N6800U | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| JAN2N6802 | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| JAN2N6802E3 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 |
| JAN2N6802U | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。