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參數(shù)資料
| 型號： | JAN2N6798 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5.5A I(D) | TO-39 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 200伏五（巴西）直| 5.5AI（四）| TO - 39封裝 |
| 文件頁數(shù)： | 7/19頁 |
| 文件大?。?/td> | 103K |
| 代理商： | JAN2N6798 |
MIL-PRF-19500/512E
15
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 4
Magnitude of common
emitter small-signal
short-circuit forward-
current transfer ratio
3306
VCE = 10 V dc; IC = 50 mA dc;
f = 100 MHz
| hfe |
1.5
6.0
Open circuit output
capacitance
3236
VCB = 10 V dc; IE = 0
100 kHz
≤ f ≤ 1 MHz
Cobo
20
pF
Input capacitance
(output open-circuited)
3240
VEB = 0.5 V dc; IC = 0;
100 kHz
≤ f ≤ 1 MHz
Cibo
80
pF
Pulse response
On-time
3251
Test condition A; IC = 500 mA dc;
IB1 = 50 mA dc; (see figure 6)
td
15
ns
Rise time
3251
Test condition A; IC = 500 mA dc;
IB1 = 50 mA dc; (see figure 6)
tr
25
ns
Storage time
3251
Test condition A; IC = 500 mA dc;
IB1 = 50 mA dc; (see figure 7)
ts
175
ns
Fall time
3251
Test condition A; IC = 500 mA dc;
IB1 = 50 mA dc; (see figure 7)
tf
35
Ns
Subgroups 5, 6, and 7
Not applicable
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure
in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| JAN2N6798E3 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 |
| JAN2N6798U | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET (NFET) - Bulk |
| JAN2N6800 | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
| JAN2N6800E3 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 |
| JAN2N6800U | 制造商:Microsemi Corporation 功能描述:N CHANNEL MOSFET - Bulk |
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