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參數(shù)資料
| 型號(hào)： | JAN2N1309 |
| 英文描述： | TRANSISTOR | BJT | PNP | 300MA I(C) | TO-5 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 300mA的一（c）|至5 |
| 文件頁(yè)數(shù)： | 6/19頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | JAN2N1309 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)當(dāng)前第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)
MIL-PRF-19500/512E
14
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 2 – Continued
Forward-current
transfer ratio
3076
VCE = 5.0 V dc; IC = 100 mA dc
hFE2
100
300
Forward-current
transfer ratio
3076
VCE = 5.0 V dc; IC = 500 mA dc
pulsed (see 4.5.1)
hFE3
70
Forward-current
transfer ratio
3076
VCE = 5.0 V dc; IC = 1.0 A dc;
pulsed (see 4.5.1)
hFE4
25
Collector – emitter
saturated voltage
3071
IC = 150 mA dc; IB = 15 mA dc
pulsed (see 4.5.1)
VCE(SAT)1
0.15
V dc
Collector – emitter
saturated voltage
3071
IC = 500 mA dc; IB = 50 mA dc;
pulsed (see 4.5.1)
VCE(SAT)2
0.50
V dc
Collector – emitter
saturated voltage
3071
IC = 1.0 A dc; IB = 100 mA dc;
pulsed (see 4.5.1)
VCE(SAT)3
1.0
V dc
Base – emitter
Saturated voltage
3066
Test condition A; IC = 150 mA
dc; IB = 15 mA dc pulsed (see
4.5.1)
VBE(SAT)1
0.9
V dc
Base - emitter
Saturated voltage
3066
Test condition A; IC = 500 mA
dc; IB = 50 mA dc; pulsed (see
4.5.1)
VBE(SAT)2
1.2
V dc
Subgroup 3
High-temperature
operation:
TA = +150°C
Collector -base
cutoff current
3036
Bias condition D;
VCB = 60 V dc
ICBO3
25
A dc
Low-temperature
operation:
TA = -55°C
Forward-current
transfer ratio
3076
VCE = 5.0 V dc; IC = 500 mA dc
pulsed (see 4.5.1)
hFE5
30
See footnotes at end of table.
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