參數(shù)資料
型號: JAN2N1132
英文描述: TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 600MA I(C) | TO-39
中文描述: 晶體管|晶體管|進步黨| 35V的五(巴西)總裁| 600毫安一(c)| TO - 39封裝
文件頁數(shù): 17/21頁
文件大?。?/td> 137K
代理商: JAN2N1132
MIL-PRF-19500/368F
5
Ltr
Inches
Millimeters
Min
Max
Min
Max
A
.038
.044
0.97
1.12
C
.038
.044
0.97
1.12
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. The physical characteristics of the die thickness are, .006 inch (0.15 mm) to .012 inch (0.30 mm).
Metallization, top: Al = 17,500 minimum, 20,000 nominal.
Back: Au = 2,500 minimum, 3,000 nominal.
Bonding pad: B = .004 inch (0.10 mm) by .005 inch (0.13 mm).
E = .004 inch (0.10 mm) by .005 inch (0.13 mm).
4. Backside is collector.
5. Requirements in accordance with MIL-PRF-19500 are performed in a TO-5 package.
* FIGURE 2. Physical dimensions JANHCA and JANKCA (die) A versions.
相關(guān)PDF資料
PDF描述
JAN2N1132L TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 600MA I(C) | TO-39VAR
JAN2N1165 TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 25A I(C) | TO-41
JAN2N1183 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 3A I(C) | TO-8
JAN2N1183A TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3A I(C) | TO-8
JAN2N1183B TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 3A I(C) | TO-8
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