參數(shù)資料
型號: JAN2N1131L
英文描述: TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 600MA I(C) | TO-39VAR
中文描述: 晶體管|晶體管|進步黨| 35V的五(巴西)總裁| 600毫安一(c)|至39VAR
文件頁數(shù): 17/21頁
文件大小: 137K
代理商: JAN2N1131L
MIL-PRF-19500/368F
5
Ltr
Inches
Millimeters
Min
Max
Min
Max
A
.038
.044
0.97
1.12
C
.038
.044
0.97
1.12
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. The physical characteristics of the die thickness are, .006 inch (0.15 mm) to .012 inch (0.30 mm).
Metallization, top: Al = 17,500 minimum, 20,000 nominal.
Back: Au = 2,500 minimum, 3,000 nominal.
Bonding pad: B = .004 inch (0.10 mm) by .005 inch (0.13 mm).
E = .004 inch (0.10 mm) by .005 inch (0.13 mm).
4. Backside is collector.
5. Requirements in accordance with MIL-PRF-19500 are performed in a TO-5 package.
* FIGURE 2. Physical dimensions JANHCA and JANKCA (die) A versions.
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JAN2N1132 TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 600MA I(C) | TO-39
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JAN2N1132 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 40V 0.6A 3-Pin TO-39
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JAN2N1165 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 25A I(C) | TO-41