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參數(shù)資料
| 型號(hào)： | JAN1N945BUR-1 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 131K |
| 代理商： | JAN1N945BUR-1 |
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +50°C
Power Derating: 4 mW / °C above +50°C
REVERSE LEAKAGE CURRENT
lR = 15 A @ 25°C & VR = 8 Vdc
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
CDI
ZENER
MAXIMUM
VOLTAGE
TEMPERATURE
EFFECTIVE
TYPE
VOLTAGE
TEST
ZENER
TEMPERATURE
RANGE
TEMPERATURE
NUMBER
CURRENT
IMPEDANCE
STABILITY
COEFFICIENT
VZ @ I ZT
I ZT
ZZT
V ZT
MAXIMUM
(Note 1)
(Note 2)
VOLTS
mA
OHMS
mV
°C
% / °C
CDLL941
11.12 - 12.28
7.5
30
88
0 to + 75
0.01
CDLL941A
11.12 - 12.28
7.5
30
181
-55 to +100
0.01
CDLL941B
11.12 - 12.28
7.5
30
239
-55 to +150
0.01
CDLL942
11.12 - 12.28
7.5
30
44
0 to + 75
0.005
CDLL942A
11.12 - 12.28
7.5
30
90
-55 to +100
0.005
CDLL942B
11.12 - 12.28
7.5
30
120
-55 to +150
0.005
CDLL943
11.12 - 12.28
7.5
30
18
0 to + 75
0.002
CDLL943A
11.12 - 12.28
7.5
30
36
-55 to +100
0.002
CDLL943B
11.12 - 12.28
7.5
30
47
-55 to +150
0.002
CDLL944
11.12 - 12.28
7.5
30
9
0 to + 75
0.001
CDLL944A
11.12 - 12.28
7.5
30
18
-55 to +100
0.001
CDLL944B
11.12 - 12.28
7.5
30
24
-55 to +150
0.001
CDLL945
11.12 - 12.28
7.5
30
4
0 to + 75
0.0005
CDLL945A
11.12 - 12.28
7.5
30
9
-55 to +100
0.0005
CDLL945B
11.12 -12.28
7.5
30
12
-55 to +150
0.0005
1N941BUR-1, 1N943UR-1B, 1N944BUR-1 AND 1N945BUR-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/157
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
LEADLESS PACKAGE FOR SURFACE MOUNT
11.7 VOLT NOMINAL ZENER VOLTAGE
METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION
1N941BUR-1 thru1N945BUR-1
and
CDLL941 thru CDLL945B
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION: Any.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
D
1.60
1.70
0.063 0.067
F
0.41
0.55
0.016 0.022
G
3.30
3.70
.130
.146
G1
2.54 REF.
.100 REF.
S
0.03 MIN.
.001 MIN.
NOTE 1
Zener impedance is derived by superimposing on lZT A 60Hz rms a.c.
current equal to 10% of lZT.
NOTE 2
The maximum allowable change observed over the entire temperature range i.e.,
the diode voltage will not exceed the specified mV at any discrete temperature
between the established limits, per JEDEC standard No.5.
101
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTX1N944BUR-1 | 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA |
| JAN1N941BUR-1 | 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA |
| JANTXV1N941BUR-1 | 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA |
| JANTXV1N944BUR-1 | 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA |
| JANTXV1N943BUR-1 | 11.7 V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA |
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