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參數(shù)資料
| 型號： | JAN1N914-1 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.075 A, SILICON, SIGNAL DIODE, DO-35 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 26K |
| 代理商： | JAN1N914-1 |
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
Applications
Used in general purpose applications, where performance and switching
speed are important.
Features
Six sigma quality
Metallurgically bonded
BKC's Sigma Bond plating
for problem free solderability
LL-34/35 MELF SMD available
Full approval to Mil-S-19500/116
Available up to JANTXV levels
"S" level screening available to SCDs
Maximum Ratings
Symbol
Value
Unit
Peak Inverse Voltage
PIV
100 (Min.)
Volts
Average Rectified Current
I
Avg
75
mAmps
Continuous Forward Current
I
Fdc
300
mAmps
Peak Surge Current (t
peak = 1 sec.)
I
peak
0.5
Amp
Power Dissipation @ T
L=50
oC, L = 3/8" from body
P
tot
250
mWatts
Storage & Operating Temperature Range
T
St & Op
-65 to +200
oC
Electrical Characteristics @ 25 oC*
Symbol
Absolute Limits
Unit
Breakdown Voltage @ Ir = 0.1 mA
PIV
100 (Min)
Volts
Reverse Leakage Current @ V
R = 20 V
I
R
0.025 (Max)
A
Reverse Leakage (Vr =20 V, 150 oC)
I
R
50 (Max)
A
Reverse Leakage Current @ V
R = 75 V
I
R
5.0 (Max)
A
Capacitance @ V
R = 0 V,
f = 1mHz
C
T
4.0 (Max)
pF
Reverse Recovery Time (note 1)
t
rr
4.0 (Max)
nSecs
Forward Recovery Time (note 2)
V
fr
2.5 (Max)
Volts
Note 1: I
F = 10 mA, RL = 100 Ohms, Vr = 6.0 Volts , Irr =1.0 mA
Note 2: I
F = 50 mA dc
*UNLESS OTHERWISE SPECIFIED
Silicon Switching Diode
DO-35 Glass Package
1N914
or
1N914-1
DO-35 Glass Package
Dia.
0.06-0.09"
1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08-
m m
1.53-2.28m m
0 .0 18-0 .0 22"
0 .458-0 .558m m
L
ea dDi
a .
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參數(shù)描述 |
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| JAN1N914A | 制造商: 功能描述: 制造商:undefined 功能描述: |
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