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參數(shù)資料
| 型號(hào)： | JAN1N6642U |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.1 A, 75 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED GLASS PACKAGE-2 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 562K |
| 代理商： | JAN1N6642U |
1
Revision Date: 11/4/2009
New Product
Switching Diodes 1N6638 Series
1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643,
1N6638U & US, 1N6639U & US, 1N6640U & US,
1N6641U & US 1N6642U & US, 1N6643U & US
Maximum Ratings
Operating Temperature: -65°C to +175°C
Storage Temperature:
-65°C to +175°C
Operating Current:
300mA
Derating:
See Figure 5
Surge Current:
IFSM = 2.5A, half sine wave,
PW = 8.3ms
Thermal Resistance:
(RJEC): U & US 40 °C/W maximum at L = 0”
See Figure 6
(RJL): Leaded 150 °C/W maximum at L = .375”
See Figure 7
Thermal Impedance: (ZJX): 25 °C/W maximum
VFR / τfr @CT1
CT2
τrr
IR1
IR2
IR3
IR4
VBR @ IR
VWRM
IF = 200 mA
VR=0 V
VR=1.5 V IR = 10mA VR=VRWM
VR=20V
VR = VRWM
TYPES
IF = 10mA
TA = 150°C
V(pk)
μA
V(pk)
VFR
τfr
V(pk)
ns
pF
ns
nA dc
μA dc
1N6638, U & US
150
100
125
5.0
20
2.5
2.0
4.5
35
500
50
100
1N6639, U & US
100
10
75
5.0
10
2.5
‐
4.0
‐
100
‐
90
1N6640, U & US
75
10
50
5.0
10
2.5
‐
4.0
‐
100
‐
90
1N6641, U & US
75
10
50
5.0
10
3.0
‐
5.0
‐
100
‐
90
1N6642, U & US
100
75
5.0
20
5.0
2.8
5.0
25
500
50
100
1N6643, U & US
75
100
50
5.0
20
5.0
2.8
6.0
50
500
75
100
Electrical Specifications @ TA = + 25 C ( Unless Otherwise Specified )
VF @ IF
VF2 @ IF
IF
TYPES
TA = -55°C
V dc
mA
(min)
(max)
(pulsed)
1N6638, U & US
‐
1.1
1.2
200
‐
0.8
‐
10
1N6639, U & US
‐
1.2
1.3
500
1N6640, U & US
0.54
0.62
-
1
0.76
0.86
‐
50
0.82
0.92
‐
100
0.87
1.0
1.1
200
1N6641, U & US
‐
1.1
1.2
200
1N6642, U & US
‐
1.0
‐
10
‐
1.2
100
1N6643, U & US
‐
1.0
‐
10
‐
1.2
1.4
100
Features
Available in JAN, JAN TX, JANTXV
per MIL
‐PRF‐19500/578 & /609
Switching Diodes
Non
‐Cavity Glass Plackage
Category I Metallurgically Bonded
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JANTXV1N6639 | 0.5 A, 75 V, SILICON, SIGNAL DIODE |
| JANTX1N6642U | 0.1 A, 75 V, SILICON, SIGNAL DIODE |
| JANTX1N6642US | 0.1 A, 75 V, SILICON, SIGNAL DIODE |
| JAN1N6643US | 0.1 A, 50 V, SILICON, SIGNAL DIODE |
| JANTXV1N6641U | 0.2 A, 50 V, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JAN1N6642UB | 制造商:Microsemi Corporation 功能描述:1N6642UBJAN - Bulk |
| JAN1N6642UB2 | 制造商:Microsemi Corporation 功能描述:1N6642UB2JAN - Bulk |
| JAN1N6642UB2R | 制造商:Microsemi Corporation 功能描述:1N6642UB2RJAN - Bulk |
| JAN1N6642UBCA | 制造商:Microsemi Corporation 功能描述:1N6642UBCAJAN - Bulk |
| JAN1N6642UBCC | 制造商:Microsemi Corporation 功能描述:1N6642UBCCJAN - Bulk |
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