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參數(shù)資料
| 型號： | JAN1N6104US |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | HERMETIC SEALED, GLASS, D-5B, E-MELF-2 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 169K |
| 代理商： | JAN1N6104US |
Voidless-Hermetically-Sealed Surface
Mount Bidirectional Transient Suppressors
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6103US thru 1N6137AUS
and 1N6139US thru 1N6173AUS
1N6
103
US
–
1N6
137
AUS
1N6
139
US
GRAPHS
Microsemi
Scottsdale Division
Page 3
Copyright
2008
05-06-2008 REV D
–
1N6
173
AUS
PULSE TIME (
tp)
FIGURE 1
PEAK PULSE POWER vs. PULSE TIME
MAX
PEAK
PULSE
PO
WER
(P
PP
)OR
CURREN
T
(I
PP
)I
N
PERCENT
OF
MAX
RATIN
G
S
Peak
Pulse
Power
(P
PP
)
100
10
0
10,00
0
JUNCTION TEMPERATURE (TJ) IN
oC
FIGURE 2
PULSE DERATING CURVE
(prior to impulse)
PULSE
CURRE
NT
(I
PP
)
IN
PERCENT
OF
I PP
TIME (t) IN MILLISECONDS
FIGURE 3
PULSE WAVE FORM
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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