參數(shù)資料
型號： JAN1N5553US
廠商： SENSITRON SEMICONDUCTOR
元件分類： 整流器
英文描述： 3 A, SILICON, RECTIFIER DIODE
封裝： MELF-B, 2 PIN
文件頁數(shù)： 1/3頁
文件大?。?/td> 44K
代理商： JAN1N5553US
221 West Industry Court
Deer Park, NY 11729
(631) 586 7600, FAX (631) 242 9798
World Wide Web - www.sensitron.com E-mail Address - sales@sensitron.com
SENSITRON
_____
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 126, REV F
HIGH CURRENT AXIAL LEAD RECTIFIERS
DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER
-Suffix “US” denotes melf/surface mount packaging
MAX. RATINGS / ELECTRICAL CHARACTERISTICS
All ratings are at TA = 25
oC unless otherwise specified.
RATING
CONDITIONS
MIN
TYP
MAX
UNIT
Peak Inverse Voltage
(PIV)
1N5550
1N5551
1N5552
1N5553
1N5554
-
200
400
600
800
1000
Vdc
Average DC Output
Current (Io)
TA = +55
oC
-
3.0
Amps
Peak Single Cycle Surge
Current (Ifsm)
tp = 8.3 ms Single
Half Cycle Sine
Wave,
Superimposed On
Rated Load
-
150
Amps(pk)
Operating and Storage
Temp. (Top & Tstg)
-
-65
-
+175
°C
Maximum Forward
Voltage (Vf)
1N5550
1N5551
1N5552
1N5553
1N5554
If = 9.0A (300 sec
pulse, duty cycle <
2%)
-
1.2
1.3
Volts
Maximum Instantaneous
Reverse Current At Rated
(PIV)
TA = 25° C
TA = 100° C
-
1.0
75
Amps
Reverse Recovery Time
(trr)
If = 0.5A, Ir = 1.0A, Irr
= 0.25A
-
2000
nsec
Thermal Resistance (
θ
JL)
Junction to Lead
d = 0.375”
22
°C/W
Thermal Resistance (
θ
JEC)
Junction to Endcap
-
11
° C/W
1N5550/US
1N5551/US
1N5552/US
1N5553/US
1N5554/US
JAN
SJ
JANTX SX
JANTXV SV
相關PDF資料
PDF描述
JANTX1N5552US 3 A, 600 V, SILICON, RECTIFIER DIODE
JANTX1N5553US 3 A, 800 V, SILICON, RECTIFIER DIODE
JANTX1N5550US 3 A, 200 V, SILICON, RECTIFIER DIODE
JANTXV1N5551US 3 A, 400 V, SILICON, RECTIFIER DIODE
JAN1N5552US 3 A, SILICON, RECTIFIER DIODE
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