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參數(shù)資料
| 型號(hào)： | JAN1N3673RA |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 整流器 |
| 英文描述： | 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 封裝： | ROHS COMPLIANT, DO-4, 1 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 125K |
| 代理商： | JAN1N3673RA |
Document Number: 93493
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 24-Jun-08
1
Medium Power
Silicon Rectifier Diodes, 12 A
1N1...A, 1N36..A Series
Vishay High Power Products
FEATURES
Voltage ratings from 50 to 1000 V
High surge capability
Low thermal impedance
High temperature rating
Can be supplied as JAN and JAN-TX devices in
accordance with MIL-S-19500/260
RoHS compliant
Note
(1) JEDEC registered values
ELECTRICAL SPECIFICATIONS
Notes
(1) JEDEC registered values
(2) Basic part number indicates cathode to case; for anode to case, add “R” to part number, e.g., 1N1199RA
PRODUCT SUMMARY
IF(AV)
12 A
DO-203AA (DO-4)
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
UNITS
IF(AV)
12 (1)
A
TC
150 (1)
°C
IFSM
50 Hz
230
A
60 Hz
240 (1)
I2t
50 Hz
260
A2s
60 Hz
240
TC
- 65 to 200
°C
VRRM
Range
50 to 1000 (1)
V
VOLTAGE RATINGS
TYPE NUMBER (2)
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VR(RMS), MAXIMUM RMS
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VRM, MAXIMUM DIRECT
REVERSE VOLTAGE
V
TC = - 65 °C TO 200 °C
1N1199A
50 (1)
35 (1)
100 (1)
50 (1)
1N1200A
100 (1)
70 (1)
200 (1)
100 (1)
1N1201A
150 (1)
105 (1)
300 (1)
150 (1)
1N1202A
200 (1)
140 (1)
350 (1)
200 (1)
1N1203A
300 (1)
210 (1)
450 (1)
300 (1)
1N1204A
400 (1)
280 (1)
600 (1)
400 (1)
1N1205A
500 (1)
350 (1)
700 (1)
500 (1)
1N1206A
600 (1)
420 (1)
800 (1)
600 (1)
1N3670A
700 (1)
490
900 (1)
700 (1)
1N3671A
800 (1)
560
1000 (1)
800 (1)
1N3672A
900 (1)
630
1100 (1)
900 (1)
1N3673A
1000 (1)
700
1200 (1)
1000 (1)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| JAN1N3670A | 12 A, 700 V, SILICON, RECTIFIER DIODE, DO-203AA |
| JAN1N1203RA | 12 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AA |
| JAN1N1200RA | 12 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AA |
| JAN1N3671RA | 12 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AA |
| JAN1N3672RA | 12 A, 900 V, SILICON, RECTIFIER DIODE, DO-203AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| JAN1N3766 | 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 800V 40A 2PIN DO-203AB - Bulk |
| JAN1N3766R | 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 800V 40A 2PIN DO-203AB - Bulk |
| JAN1N3768 | 制造商:Microsemi Corporation 功能描述:Diode Switching 1KV 35A 2-Pin DO-5 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 1KV 40A 2PIN DO-203AB - Bulk |
| JAN1N3768CDKF8326 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| JAN1N3768R | 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 1KV 40A 2PIN DO-203AB - Bulk |
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