參數(shù)資料
型號(hào)： JAN1N3657
廠商： MICROSEMI CORP-SCOTTSDALE
元件分類： 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述： 1 A, SILICON, SIGNAL DIODE
封裝： HERMETIC SEALED, GLASS PACKAGE-2
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 289K
代理商： JAN1N3657
VOIDLESS-HERMETICALLY-SEALED
STANDARD RECOVERY GLASS
RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2004
12-08 2004 REV A
W
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SCOTTSD A L E DIVISION
1N3611 thru 1N3614, 1N3957
1N3
611
-
1N
36
14,
1N3
95
7
DESCRIPTION
APPEARANCE
This “standard recovery” rectifier diode series is military qualified to MIL-PRF-
19500/228 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
similar in ratings to the 1N5614 thru 1N5622 series where surface mount MELF
package configurations are available by adding a “US” suffix (see separate data
sheet for 1N5614US thru 1N5622US). Microsemi also offers numerous other
rectifier products to meet higher and lower current ratings with various recovery time
speed requirements including fast and ultrafast device types in both through-hole
and surface mount packages.
“A” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Popular JEDEC registered 1N3611 thru 1N3614 and
1N3597 series
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/286 (for JANS, see 1N5614-5622 series)
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (also
see 1N5614US thru 1N5622US)
Standard recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction & Storage Temperature: -65oC to +175oC
Thermal Resistance: 38oC/W junction to lead at 3/8
inch (10 mm) lead length from body
Average Rectified Forward Current (IO): 1.0 Amps @
TA = 100C and 0.30 Amps at 150C
Forward Surge Current: 30 Amps @ 8.3 ms half-sine
Solder Temperatures: 260C for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish
MARKING: Body paint and part number, etc.
POLARITY: Cathode band
TAPE & REEL option: Standard per EIA-296
WEIGHT: 340 mg
See package dimensions on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ 100A
AVERAGE
RECTIFIED
CURRENT
(NOTE 2)
IO
MAXIMUM
FORWARD
VOLTAGE
VF @ 1 A
(PULSED)
MAXIMUM REVERSE
CURRENT
IR @ VRWM
MAXIMUM
SURGE
CURRENT
(NOTE1)
IFSM
VOLTS
AMPS
VOLTS
A
AMPS
100
oC
150
oC
25
oC
150
oC
JAN1N3611
JAN1N3612
JAN1N3613
JAN1N3614
JAN1N3957
200
400
600
800
1000
240
480
720
920
1150
1.0
0.30
1.1
1.0
300
30
NOTE 1: TA = 25
oC, IO = 1.0 A, 10 surges of 8.3 ms @ 1 minute intervals
NOTE 2: Linearly derate at 13.3 mA/C between TA=100C and 175C
相關(guān)PDF資料
PDF描述
JANTXV1N3657US 1 A, SILICON, SIGNAL DIODE
JAN1N3827AUR-1 5.6 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
JANTX1N3821AUR-1 3.3 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
JANTXV1N3823AUR-1 3.9 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
JANTX1N3825AUR-1 4.7 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
JAN1N3671A 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) (REC) - Bulk
JAN1N3671AR 制造商:Microsemi Corporation 功能描述:STANDARD RECTIFIER (TRR MORE THAN 500NS) (REC) - Bulk
JAN1N3671R 功能描述:Diode Standard, Reverse Polarity 800V 12A Chassis, Stud Mount DO-203AA (DO-4) 制造商:microsemi ire division 系列:軍用，MIL-PRF-19500/260 包裝:散裝 零件狀態(tài):在售 二極管類型:標(biāo)準(zhǔn)型， 反極性 電壓 - DC 反向（Vr）（最大值）:800V 電流 - 平均整流（Io）:12A 不同 If 時(shí)的電壓 - 正向（Vf）:1.35V @ 38A 速度:標(biāo)準(zhǔn)恢復(fù) >500ns，> 200mA（Io） 反向恢復(fù)時(shí)間（trr）:- 不同?Vr 時(shí)的電流 - 反向漏電流:5μA @ 800V 不同?Vr，F(xiàn) 時(shí)的電容:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應(yīng)商器件封裝:DO-203AA（DO-4） 工作溫度 - 結(jié):-65°C ~ 150°C 標(biāo)準(zhǔn)包裝:1
JAN1N3673A 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 1KV 22A 2PIN DO-4 - Bulk
JAN1N3673AR 制造商:Microsemi Corporation 功能描述:Diode Switching 1KV 22A 2-Pin DO-4 制造商:Microsemi Corporation 功能描述:STD RECOVERY RECTFR 1KV 22A 2PIN DO-4 - Bulk
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