參數(shù)資料
型號(hào)： JAN1N3600
元件分類(lèi)： 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述： 0.3 A, SILICON, SIGNAL DIODE, DO-35
封裝： HERMATIC SEALED, GLASS PACKAGE-2
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 222K
代理商： JAN1N3600
1
Revision Date: 12/7/2009
New Product
Silicon Switching Diodes
1N4150, 1N4150-1 & 1N3600
Maximum Ratings
Operating & Storage Temperature: -65°C to +175°C
Operating Current: 300 mA @ TA = +25°C
Derating: 2.0 mA dc/°C Above TL = + 75°C @ L = 3/8”
Surge Current A:
2A (pk) tp = 8.3 mS, VRM = 0
Surge Current B:
4A (pk) tp = 1 us, VRM = 0
Features
Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231
Metallurgically Bonded
Hermetically Sealed
Double Plug Construction
VBR
VRWM
IR1
IR2
CTrr
TYPE
VR = 50 Vdc
IR = 0; f = 1 MHz
IF = IR = 10 to 100 mA dc
Number
IR = 10 μA
TA = 25 °C
TA =150°C
ac signal = 50 mV (p-P)
RL = 100 Ω
V dc
V (pk)
μA dc
pF
ns
1N3600
75
50
0.1
100
2.5
4.0
1N4151, -1
75
50
0.1
100
2.5
4.0
Electrical Specifications @ +25 C (Unless Otherwise Specified)
LEADED DESIGN DATA
CASE: Hermetically sealed glass case per MIL-S-19500/231, DO – 35
LEAD MATERIAL: Copper clad steel
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (RJL): 250 °C/W maximum at L = 0.375 in
THERMAL IMPEDANCE: (ZJX): 70 °C/W maximum
POLARITY: Cathode end is banded.
0.080
2.03
MAX
DIA
POLARITY
BAND
(CATHODE)
0.018 / 0.022
0.457 / 0.559
DIA
0.175
4.44
MAX
1.000
25.400
MIN
All dimensions in INCH
mm
1.000
25.400
MIN
Outline Drawing
VF1
VF2
VF3
VF4
VF5
IF = 1 mA dc
IF = 10 mA dc
IF = 50 mA dc
IF = 100 mA dc
IF = 200 mA dc
Limits
(Pulsed)
V dc
minimum
0.540
0.660
0.760
0.820
0.870
maximum
0.620
0.740
0.860
0.920
1.000
Forward Voltage Limits - All Types
相關(guān)PDF資料
PDF描述
JANTXV1N3600 0.3 A, SILICON, SIGNAL DIODE, DO-35
JAN1N4150 0.3 A, SILICON, SIGNAL DIODE, DO-35
JANTXV1N4150-1 0.3 A, 75 V, SILICON, SIGNAL DIODE, DO-35
JAN1N4153-1 0.15 A, SILICON, SIGNAL DIODE, DO-35
JANTXV1N4153 0.15 A, SILICON, SIGNAL DIODE, DO-35
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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