
B-58
01/99
J230, J231
N-Channel Silicon Junction Field-Effect Transistor
¥ Audio Amplifiers
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 40 V
50 mA
360 mW
3.27 mW/°C
TOD226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ230, SMPJ231
At 25°C free air temperature:
Static Electrical Characteristics
J230
J231
Process NJ16
Min
Typ
Max
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Operating Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
(BR)GSS
I
GSS
I
G
V
GS(OFF)
I
DSS
– 40
– 40
V
pA
pA
V
mA
I
G
= – 1μA, V
DS
= V
V
GS
= – 30V, V
DS
= V
V
DS
= 20V, I
D
= V
V
DS
= 20V, I
D
= 1 μA
V
DS
= 20V, V
GS
= V
– 250
– 250
– 2
– 2
– 0.5
0.7
– 3
3
– 1.5
2
– 5
6
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
g
fs
1000
3500
1500
4000
μS
V
DS
= 20V, V
GS
= V
f = 1 kHz
Common Source Output Conductance
Common Source Input Capacitance
g
os
C
iss
1.5
4
3
4
μS
pF
V
DS
= 20V, V
GS
= V
V
DS
= 20V, V
GS
= V
f = 1 kHz
f = 1 MHz
Common Source Reverse
Transfer Capacitance
C
rss
1
1
pF
V
DS
= 20V, V
GS
= V
f = 1 MHz
Equivalent Short Circuit Input
Noise Voltage
ˉ
N
8
2
30
8
2
30
nV/
√
Hz
nV/
√
Hz
V
DS
= 10V, V
GS
= V
V
DS
= 10V, V
GS
= V
f = 10 Hz
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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