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參數(shù)資料
| 型號(hào)： | J211 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel JFET(最小柵源擊穿電壓-25V，最小飽和漏極電流7mA的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| 中文描述： | N溝道場(chǎng)效應(yīng)（最小柵源擊穿電壓- 25V的，最小飽和漏極電流為7mA的N溝道結(jié)型場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 70K |
| 代理商： | J211 |
J/SSTJ210 Series
Siliconix
S-52428—Rev. D, 14-Apr-97
1
N-Channel JFETs
J210
J211
J212
SSTJ211
SSTJ212
Product Summary
Part Number
V
GS(off)
(V)
V
(BR)GSS
Min (V)
g
fs
Min (mS)
I
DSS
Min (mA)
J210
–1 to –3
–25
4
2
J/SSTJ211
–2.5 to –4.5
–25
6
7
J/SSTJ212
–4 to –6
–25
7
15
Features
Excellent High Frequency Gain:
J211/212, Gps 12 dB (typ) @ 400 MHz
Very Low Noise: 3 dB (typ) @ 400 MHz
Very Low Distortion
High ac/dc Switch Off-Isolation
High Gain: A
V
= 35 @ 100 A
Benefits
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High-Quality Low-Level Signal
Amplification
Applications
High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
Description
The J/SSTJ210 Series n-channel JFETs are general-purpose
and high-frequency amplifiers for a wide range of
applications. These devices feature low leakage (I
GSS
< 100 pA).
The TO-226AA (TO-92) plastic package, provides low cost
while the TO-236 (SOT-23) package provides surface-mount
capability. The J/SSTJ210 Series is available in tape-and-reel
for automated assembly (see Packaging Information).
For similar dual products, see the 2N5911/5912 and U440/441
data sheets.
TO-226AA
(TO-92)
Top View
D
G
S
1
2
3
D
S
G
TO-236
(SOT-23)
Top View
2
3
1
*Marking Code for TO-236
SSTJ211 (Z1)*
SSTJ212 (Z2)*
J210
J211
J212
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70234.
Applications information may also be obtained via FaxBack, request document #70597.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| J210 | N-Channel JFET(最小柵源擊穿電壓-25V，最小飽和漏極電流2mA的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| J212 | N-Channel JFET(最小柵源擊穿電壓-25V，最小飽和漏極電流15mA的N溝道結(jié)型場(chǎng)效應(yīng)管) |
| J500 | Current Regulator Diodes |
| J501 | Current Regulator Diodes |
| J502 | Current Regulator Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| J211"D74Z | 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL JFET -25V TO-92 |
| J211 | 制造商:Vishay Siliconix 功能描述:TRANSISTOR JFET N TO-92 |
| J211_D27Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| J211_D74Z | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| J211_Q | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
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