參數(shù)資料
型號： IXTT88N30P
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： PolarHT Power MOSFET
中文描述： 88 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
封裝： TO-268, 3 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 589K
代理商： IXTT88N30P
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
40
50
S
C
iss
C
oss
C
rss
6300
950
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
190
pF
t
d(on)
t
r
t
d(off)
t
f
25
24
96
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
R
G
= 3.3
(External)
25
ns
Q
g(on)
Q
gs
Q
gd
180
44
90
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.21K/W
(TO-247)
(TO-264)
0.21
0.15
K/W
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
88
A
I
SM
Repetitive
220
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
I
= 25 A
-di/dt = 100 A/
μ
s
V
R
= 100 V
250
ns
Q
RM
3.3
μ
C
IXTH 88N30P
IXTT 88N30P
TO-268 Outline
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
TO-247 AD Outline
1 2 3
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
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